Silicon Controlled Rectifier, 80A I(T)RMS, 46000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element,
Parameter Name | Attribute value |
Reach Compliance Code | unknown |
Shell connection | ANODE |
Nominal circuit commutation break time | 60 µs |
Configuration | SINGLE |
Critical rise rate of minimum off-state voltage | 1000 V/us |
Maximum DC gate trigger current | 150 mA |
Maximum DC gate trigger voltage | 2.5 V |
Maximum holding current | 200 mA |
JESD-30 code | O-MUPM-D2 |
Maximum leakage current | 10 mA |
On-state non-repetitive peak current | 1000 A |
Number of components | 1 |
Number of terminals | 2 |
Maximum on-state current | 46000 A |
Maximum operating temperature | 125 °C |
Minimum operating temperature | -40 °C |
Package body material | METAL |
Package shape | ROUND |
Package form | POST/STUD MOUNT |
Certification status | Not Qualified |
Maximum rms on-state current | 80 A |
Off-state repetitive peak voltage | 800 V |
Repeated peak reverse voltage | 800 V |
surface mount | NO |
Terminal form | SOLDER LUG |
Terminal location | UPPER |
Trigger device type | SCR |
Base Number Matches | 1 |