Variable Capacitance Diode, 33pF C(T), Silicon, DO-7, 2 PIN
Parameter Name | Attribute value |
Parts packaging code | DO-7 |
package instruction | O-LALF-W2 |
Contacts | 2 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Other features | HIGH Q |
Shell connection | ISOLATED |
Configuration | SINGLE |
Diode Capacitance Tolerance | 2% |
Nominal diode capacitance | 33 pF |
Diode component materials | SILICON |
Diode type | VARIABLE CAPACITANCE DIODE |
JESD-30 code | O-LALF-W2 |
JESD-609 code | e0 |
Number of components | 1 |
Number of terminals | 2 |
Maximum operating temperature | 150 °C |
Minimum operating temperature | -65 °C |
Package body material | GLASS |
Package shape | ROUND |
Package form | LONG FORM |
Maximum power dissipation | 0.4 W |
Certification status | Not Qualified |
minimum quality factor | 50 |
Maximum repetitive peak reverse voltage | 80 V |
Maximum reverse current | 5e-7 µA |
Reverse test voltage | 80 V |
surface mount | NO |
Terminal surface | TIN LEAD |
Terminal form | WIRE |
Terminal location | AXIAL |
Base Number Matches | 1 |