UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC, DP, 2 PIN
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | conform to |
| package instruction | FLATPACK, R-CDFP-F2 |
| Contacts | 2 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Other features | LOW NOISE |
| Shell connection | SOURCE |
| Configuration | SINGLE |
| Minimum drain-source breakdown voltage | 40 V |
| Maximum drain current (ID) | 8 A |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| highest frequency band | ULTRA HIGH FREQUENCY BAND |
| JESD-30 code | R-CDFP-F2 |
| JESD-609 code | e4 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 200 °C |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| Package shape | RECTANGULAR |
| Package form | FLATPACK |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | GOLD |
| Terminal form | FLAT |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
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