Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-22
Parameter Name | Attribute value |
package instruction | ECONOPACK-22 |
Reach Compliance Code | unknown |
Shell connection | ISOLATED |
Maximum collector current (IC) | 50 A |
Collector-emitter maximum voltage | 1200 V |
Configuration | BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
JESD-30 code | R-XUFM-X22 |
Number of components | 4 |
Number of terminals | 22 |
Package body material | UNSPECIFIED |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Polarity/channel type | N-CHANNEL |
surface mount | NO |
Terminal form | UNSPECIFIED |
Terminal location | UPPER |
Transistor component materials | SILICON |
Nominal off time (toff) | 350 ns |
Nominal on time (ton) | 100 ns |
Base Number Matches | 1 |
F435R12NS4BOMA1 | |
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Description | Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-22 |
package instruction | ECONOPACK-22 |
Reach Compliance Code | unknown |
Shell connection | ISOLATED |
Maximum collector current (IC) | 50 A |
Collector-emitter maximum voltage | 1200 V |
Configuration | BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
JESD-30 code | R-XUFM-X22 |
Number of components | 4 |
Number of terminals | 22 |
Package body material | UNSPECIFIED |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Polarity/channel type | N-CHANNEL |
surface mount | NO |
Terminal form | UNSPECIFIED |
Terminal location | UPPER |
Transistor component materials | SILICON |
Nominal off time (toff) | 350 ns |
Nominal on time (ton) | 100 ns |
Base Number Matches | 1 |