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F435R12NS4BOMA1

Description
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-22
CategoryDiscrete semiconductor    The transistor   
File Size273KB,8 Pages
ManufacturerEUPEC [eupec GmbH]
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F435R12NS4BOMA1 Overview

Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-22

F435R12NS4BOMA1 Parametric

Parameter NameAttribute value
package instructionECONOPACK-22
Reach Compliance Codeunknown
Shell connectionISOLATED
Maximum collector current (IC)50 A
Collector-emitter maximum voltage1200 V
ConfigurationBRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 codeR-XUFM-X22
Number of components4
Number of terminals22
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Transistor component materialsSILICON
Nominal off time (toff)350 ns
Nominal on time (ton)100 ns
Base Number Matches1

F435R12NS4BOMA1 Related Products

F435R12NS4BOMA1
Description Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-22
package instruction ECONOPACK-22
Reach Compliance Code unknown
Shell connection ISOLATED
Maximum collector current (IC) 50 A
Collector-emitter maximum voltage 1200 V
Configuration BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 code R-XUFM-X22
Number of components 4
Number of terminals 22
Package body material UNSPECIFIED
Package shape RECTANGULAR
Package form FLANGE MOUNT
Polarity/channel type N-CHANNEL
surface mount NO
Terminal form UNSPECIFIED
Terminal location UPPER
Transistor component materials SILICON
Nominal off time (toff) 350 ns
Nominal on time (ton) 100 ns
Base Number Matches 1

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