Variable Capacitance Diode, 68pF C(T), 33V, Silicon, DIE-1
| Parameter Name | Attribute value |
| Parts packaging code | DIE |
| package instruction | O-LALF-W2 |
| Contacts | 1 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Other features | LOW LEAKAGE |
| Minimum breakdown voltage | 33 V |
| Shell connection | ISOLATED |
| Configuration | SINGLE |
| Diode Capacitance Tolerance | 20% |
| Minimum diode capacitance ratio | 4.6 |
| Nominal diode capacitance | 68 pF |
| Diode component materials | SILICON |
| Diode type | VARIABLE CAPACITANCE DIODE |
| JESD-30 code | O-LALF-W2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 150 °C |
| Minimum operating temperature | -65 °C |
| Package body material | GLASS |
| Package shape | ROUND |
| Package form | LONG FORM |
| Certification status | Not Qualified |
| minimum quality factor | 9 |
| Maximum reverse current | 0.1 µA |
| Reverse test voltage | 30 V |
| surface mount | NO |
| Terminal form | WIRE |
| Terminal location | AXIAL |
| Base Number Matches | 1 |
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