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A358S12TDF

Description
Assymetric SCR, 800A I(T)RMS, 358000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element,
CategoryAnalog mixed-signal IC    Trigger device   
File Size225KB,4 Pages
ManufacturerEUPEC [eupec GmbH]
Download Datasheet Parametric View All

A358S12TDF Overview

Assymetric SCR, 800A I(T)RMS, 358000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element,

A358S12TDF Parametric

Parameter NameAttribute value
Reach Compliance Codeunknown
Other featuresFAST
Nominal circuit commutation break time15 µs
ConfigurationSINGLE WITH BUILT-IN ANTI-PARALLEL DIODE
Critical rise rate of minimum off-state voltage1000 V/us
Maximum DC gate trigger current300 mA
Maximum DC gate trigger voltage2.7 V
Maximum holding current300 mA
JESD-30 codeO-CEDB-N2
Maximum leakage current50 mA
On-state non-repetitive peak current5000 A
Number of components1
Number of terminals2
Maximum on-state current358000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Certification statusNot Qualified
Maximum rms on-state current800 A
Off-state repetitive peak voltage1200 V
Repeated peak reverse voltage1200 V
surface mountYES
Terminal formNO LEAD
Terminal locationEND
Trigger device typeASSYMETRIC SCR
Base Number Matches1
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