INTEGRATED CIRCUITS
NE527
Voltage comparator
Product data
Supersedes data of 1994 Aug 31
File under Integrated Circuits, IC11 Handbook
2001 Aug 03
Philips
Semiconductors
Philips Semiconductors
Product data
Voltage comparator
NE527
DESCRIPTION
The NE527 is a high-speed analog voltage comparator which, for
the first time, mates state-of-the-art Schottky diode technology with
the conventional linear process. This allows simultaneous
fabrication of high speed TTL gates with a precision linear amplifier
on a single monolithic chip. The NE527 is similar in design to the
Philips Semiconductors NE529 voltage comparator except that it
incorporates an “Emitter-Follower” input stage for extremely low
input currents. This opens the door to a whole new range of
applications for analog voltage comparators.
PIN CONFIGURATIONS
D, N Packages
V
1 +
1
2
3
4
5
6
7
14
13
12
11
10
9
8
V
2 +
NC
INPUT A
INPUT B
NC
V
1 –
STROBE A
NC
OUTPUT A
GND
OUTPUT B
FEATURES
•
15 ns propagation delay
•
Complementary output gates
•
TTL or ECL compatible outputs
•
Wide common-mode and differential voltage range
•
Typical gain of 5000
NC
STROBE B
TOP VIEW
SL00267
Figure 1. Pin Configuration
APPLICATIONS
•
A/D conversion
•
ECL-to-TTL interface
•
TTL-to-ECL interface
•
Memory sensing
•
Optical data coupling
ORDERING INFORMATION
DESCRIPTION
14-Pin Plastic Dual In-Line Package (DIP)
14-Pin Small Outline (SO) Package
TEMPERATURE RANGE
0
°C
to +70
°C
0
°C
to +70
°C
ORDER CODE
NE527N
NE527D
DWG #
SOT27-1
SOT108-1
EQUIVALENT SCHEMATIC
V
1
+
20K
1K
1K
STROBE A
V2
+
4K
1.5K
55
1.5K
1.5K
750
750
20K
4K
OUTPUT A
4K
INPUT A
INPUT
B
6.13K
1.5K
55
250
500
GND
7.5K
7.5K
4K
OUTPUT B
V
1
–
200
300
300
100
200
250
500
STROBE B
SL00268
Figure 2. Equivalent Schematic
2
2001 Aug 03
853-0906 26834
Philips Semiconductors
Product data
Voltage comparator
NE527
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
1
+
V
1
-
V
2
+
V
OUT
V
IN
V
CM
P
D
Positive supply voltage
Negative supply voltage
Gate supply voltage
Output voltage
Differential input voltage
Input common mode voltage
Max power dissipation
1
25
°C
ambient (still air)
N package
D package
Operating temperature range
Storage temperature range
Lead soldering temperature (10sec max)
PARAMETER
RATING
+15
–15
+7
+7
±5
±6
UNIT
V
V
V
V
V
V
1420
1040
0 to +70
–65 to +150
+230
mW
mW
°C
°C
°C
T
amb
T
stg
T
sld
NOTES:
1. Derate above 25
°C,
at the following rates:
N package 11.4 mW/°C
D package 8.3 mW/°C
BLOCK DIAGRAM
V
1 +
STROBE A
V
2 +
OUTPUT A
INPUT A
INPUT B
OUTPUT B
V
1 –
STROBE B
SL00269
Figure 3. Block Diagram
2001 Aug 03
3
Philips Semiconductors
Product data
Voltage comparator
NE527
DC ELECTRICAL CHARACTERISTICS
V
1
+ = 10V; V
1
– = –10 V; V
2
+ = +5.0 V; unless otherwise specified.
SYMBOL
Input characteristics
V
OS
I
BIAS
S
I
OS
V
CM
Input offset voltage @ 25
°C
over temperature range
Input bias current @ 25
°C
over temperature range
Input offset current @ 25
°C
over temperature range
Common-mode voltage range
Output Voltage
“1” State
“0” State
Strobe inputs
“0” Input current
1
“1” Input current @ 25
°C
1
Over temperature range
“0” Input voltage
“1” Input voltage
I
SC
Short-circuit output current
Supply voltage
V
1
+
V
1
-
V
2
+
Supply current
I
1
+
I
1
-
I
2
+
NOTE:
1. See Logic Function Table.
V
1
+ = 10 V; V
1
– = –10 V
V
2
+ = 5.25 V
Over temp.
Over temp.
Over temp.
5
–6
4.75
10
–10
5.25
V
V
V
Power supply requirements
V
IN
= 0 V
–5
6
10
2
4
0.75
1
+5
mV
µA
µA
µA
V
PARAMETER
TEST CONDITIONS
NE527
Min
Typ
Max
UNIT
Gate characteristics
V
OUT
V
2
+ = 4.75 V; I
SOURCE
= –1 mA
V
2
+ = 4.75 V; I
SINK
= 10 mA
V
2
+ = 5.25 V; V
STROBE
= 0.5 V
V
2
+ = 5.25 V; V
STROBE
= 2.7 V
V
2
+ = 5.25 V; V
STROBE
= 2.7 V
V
2
+ = 4.75 V
V
2
+ = 4.75 V
V
2
+ = 5.25 V;V
OUT
= 0 V
2.7
3.3
0.5
–2
100
200
0.8
2.0
–18
–70
V
V
mA
µA
µA
V
V
mA
5
5
10
20
mA
mA
mA
AC ELECTRICAL CHARACTERISTICS
T
amb
= 25
°C,
unless otherwise specified. (See AC test circuit)
SYMBOL
PARAMETER
Transient response propagation delay time
Low-to-High
High-to-Low
Delay between output A and B
t
ON
t
OFF
Strobe delay time
Turn-on time
Turn-off time
TEST CONDITIONS
LIMITS
Min
Typ
16
14
2
6
6
Max
26
24
5
UNIT
t
PLH
t
PHL
V
IN
=
±100
mV step
ns
ns
ns
ns
ns
2001 Aug 03
4
Philips Semiconductors
Product data
Voltage comparator
NE527
TYPICAL PERFORMANCE CHARACTERISTICS
Input Currents vs Temperature
3.0
INOUR CURRENT — A
µ
2.5
SUPPLY CURRENT — mA
2.0
1.5
1.0
0
BIAS CURRENT
15
14
13
7
6
5
4
3
2
–50 –25
0
I
2 +
V
2 +
= 5.0V
I
1 –
V
1 –
= 10V
I
1 +
V
1 +
= 10V
POWER DISSIPATION — mW
Supply Currents vs Temperature
160
150
140
130
120
110
100
5
Power Dissipation
vs Supply Voltage
V
2 +
=
5.0V
TA = 25
o
C
0.3
0.2
0.1
0
–50
–25
0
25
50
75 100 125
TEMPERATURE —
o
C
OFFSET CURRENT
25
50
75
100
6
7
8
9
10
TEMPERATURE —
o
C
SUPPLY VOLTAGE (V
1 +
, V
1 –
) — VOLTS
Supply Current
vs Supply Voltage
8
OUTPUT
VOLTAGE — V
Output Propagation Delays
5
4
3
2
1
INPUT
VOLTAGE — mV
0
+100
0
–100
0
5
10
15
OVERDRIVE
20
25
30
INPUT A
OUTPUT B
INPUT
VOLTAGE — mV
OUTPUT A
OUTPUT
VOLTAGE — V
V
1 +
= 10V, V
1 –
= — 10V
V
2 +
= 5.0V
5
4
3
2
1
0
+100
0
–100
Response Time for
Various Input Overdrives
V
1 +
= 10V, V
1 –
= — 10V
V
2 +
= 5.0V
OVERDRIVE
+
5mV
+
10mV
7
SUPPLY CURRENT — mA
6
5
4
3
2
1
0
5
T
1 –
TA = 25
o
C
V
2 +
= 5.0V
OUTPUT A
+
50mV
+
25mV
+
15mV
T
2 +
T
1 +
OVERDRIVE
INPUT B
8
9
10
+
, V
–
) — VOLTS
SUPPLY VOLTAGE (V
1
1
6
7
0
5
10
15
20
25
30
TIME — ns
TIME — ns
SL00270
Figure 4. Typical Performance Characteristics
RESPONSE TIME TEST CIRCUIT
(V1 +)
+10
10µF
INPUT PROBE
500Ω
+
0.1
1
1K
13
0.1
14
11
CR1
9
C
L
R3
6
NOTES:
CR1 — CR4 = IN914
R1 selected for 15.1 divider
R2, 3 selected for 100mV at Pin 4
Input
PRR = 1MHz
P
w
= 50ns
T
r
= T
f
= 2ns
Amplitude = 3.00V
8
1K
(V1 –)
–10
0.1
Output
R
L
= 390Ω
C
L
= 25pF (including
stray capacitance
10
CR3
CR4
CR2
+
(V2 +)
+5
10µF
OUTPUT
PROBE
+5
5K
R1
INPUT
R2
51Ω
51Ω
+5
3
4
R
L
+5
SL00271
Figure 5. Response Time Test Circuit
2001 Aug 03
5