BYV32–50M0
BYV32–100M
BYV32–150M
BYV32–200M
MECHANICAL DATA
Dimensions in mm
0 .8 9
(0 .0 3 5 )
m in .
3 .7 0 (0 .1 4 6 )
3 .7 0 (0 .1 4 6 )
3 .4 1 (0 .1 3 4 )
3 .4 1 (0 .1 3 4 )
4 .1 4 (0 .1 6 3 )
3 .8 4 (0 .1 5 1 )
1 0.6
0.8
4.6
3 .6 0 (0 .1 4 2 )
M a x .
HERMETICALLY SEALED
DUAL FAST RECOVERY
SILICON RECTIFIER
FOR HI–REL APPLICATIONS
• STANDARD (COMMON CATHODE)
• COMMON ANODE
• SERIES CONNECTION
16.5
3.6
Dia.
1 3 .5
1 0 .6
0 .7 6
(0 .0 3 0 )
m in .
1
3
1 0 .6 9 (0 .4 2 1 )
1 0 .3 9 (0 .4 0 9 )
1 23
1 3 .7 0
2
1.0
2 .5 4
BSC
2. 70
BSC
9 .6
9 .3
1 1 .5
1 1 .2
7 (0
8 (0
8 (0
8 (0
.3 8
.3 6
.4 5
.4 4
1 )
9 )
6 )
4 )
1 6 .0 2 (0 .6 3 1 )
1 5 .7 3 (0 .6 1 9 )
0 .5 0 (0 .0 2 0 )
0 .2 6 (0 .0 1 0 )
FEATURES
• HERMETIC TO220 METAL OR CERAMIC
SURFACE MOUNT PACKAGE
• SCREENING OPTIONS AVAILABLE
• ALL LEADS IOLATED FROM CASE
TO220 METAL
SMD1
CERAMIC SURFACE MOUNT
ELECTRICAL CONNECTIONS
Common Cathode
BYV32-xxxM
1
1
2
2
3
3
3
Common Anode
BYV32-xxxAM
Series Connection
BYV32-xxxRM
1
2
• VOLTAGE RANGE 50 TO 200V
• AVERAGE CURRENT 20A
• VERY LOW REVERSE RECOVERY TIME –
trr = 35ns
• VERY LOW SWITCHING LOSSES
Applications include secondary rectification in
high frequency switching power supplies.
1 = A1 Anode 1
2 = K Cathode
3 = A2 Anode 2
1 = K1 Cathode 1
2 = A Anode
3 = K2 Cathode 2
1 = K1 Cathode 1
2 = Centre Tap
3 = A2 Anode
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
RRM
V
RWM
V
R
I
FRM
I
F(AV)
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
Continuous Reverse Voltage
Repetitive Peak Forward Current
Average Forward Current
t
p
= 10
m
s
T
case
= 70°C
BYV32
–50M
50V
50V
50V
BYV32
–100M
100V
100V
100V
BYV32
–150M
150V
150V
150V
BYV32
–200M
200V
200V
200V
200A
20A
(switching operation,
d
= 0.5, both diodes conducting)
I
FSM
T
stg
T
j
Surge Non Repetitive Forward Current
Storage Temperature Range
Maximum Operating Junction Temperature
t
p
= 10 ms
80A
–65 to 200°C
200°C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 7/00
BYV32–50M0
BYV32–100M
BYV32–150M
BYV32–200M
ELECTRICAL CHARACTERISTICS
(Per Diode) (Tcase = 25°C unless otherwise stated)
Parameter
I
R
Reverse Current
Test Conditions
V
R
= V
RWM
V
R
= V
RWM
I
F
= 8A
I
F
= 20A
I
F
= 5A
I
F
= 2A
di / dt = 20A/
m
s
I
F
= 1A
di / dt = 50A/
m
s
I
F
= 2A
di / dt = 20A/
m
s
I
F
= 1A
V
R
= 30V
V
R
= 30V
T
j
= 25°C
T
j
= 100°C
T
C
= 25°C
T
C
= 25°C
T
C
= 100°C
V
R
= 30V
Min.
Typ.
Max.
30
0.6
1.1
1.5
0.95
35
50
15
Unit
m
A
mA
V
V
F
*
Forward Voltage
ns
ns
nC
V
t
rr
Reverse Recovery Time
Q
rr
V
FP
Recovered Charge
Forward Recovery Overvoltage di / dt = 10A/
m
s
1.0
* Pulse Test: t
p
£
300
m
s, duty cycle
£
2%.
THERMAL CHARACTERISTICS
(TO220 METAL CASE)
R
q
JC†
Thermal Resistance Junction – Case
1.6
°C/W
† Both diodes conducting.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
Prelim. 7/00
FPGA/CPLD
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