KBJ1510 datasheet, PDF - EEWORLD Datasheet

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KBJ1510: DescriptionSingle Phase 15A Silicon Bridge Rectifiers Single Phase 15A Silicon Bridge Rectifiers; CategoryDiscrete semiconductor; File Size97KB，2 Pages; ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.; Websitehttp://www.21yangjie.com/; Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.

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KBJ1510 Overview

Single Phase 15A Silicon Bridge Rectifiers Single Phase 15A Silicon Bridge Rectifiers

Features

Product Name: Single Phase 15A Silicon Bridge Rectifiers

Product model: KBJ1510

product features:

UL Recognized File # E-230084

Ideal for printed circuit board

Reliable low cost construction technique results in inexpensive product

High temperature soldering guaranteed:

260℃ / 10 seconds / 0.375” ( 9.5mm )

lead length at 5 lbs., ( 2.3 kg ) tension

Maximum Ratings and Electrical Characteristics:

Rating at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

product data:

Maximum Repetitive Peak Reverse Voltage VRRM Maximum reverse peak voltage: 1000V

Maximum RMS Voltage VRMS Voltage effective value: 700V

Maximum DC blocking Voltage VDC Maximum DC blocking voltage: 1000V

Maximum Average Forward Rectified Current IF(AV) Maximum forward current: 15 A

Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Super imposed on Rated Load IFSM Maximum forward surge current: 200 A

Maximum Instantaneous Forward Voltage Drop Per Leg @ 15A VF Maximum forward voltage drop: 1.1 V

Maximum Reverse Current at Rated @TA=25℃ IR Maximum reverse leakage current: 10μA

DC blocking voltage @TA= 100℃ IR Maximum reverse leakage current: 500μA

Typical Thermal Resistance (Note) RθJC Thermal resistance coefficient: 0.8℃/W

Operating Temperature Range TJ Operating Junction Temperature: -55 to +150 ℃

Storage Temperature Range TSTG Storage Temperature Range: -55 to +150 ℃

Package: KBJ6

KBJ1510 Parametric

Parameter Name	Attribute value
Maker	Yangzhou Yangjie Electronic Technology Co., Ltd.
Reach Compliance Code	unknown
Is Samacsys	N
Configuration	BRIDGE, 4 ELEMENTS
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.05 V
Maximum non-repetitive peak forward current	240 A
Number of components	4
Maximum operating temperature	150 °C
Maximum output current	10 A
Maximum repetitive peak reverse voltage	1000 V
surface mount	NO
Base Number Matches	1

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KBJ(10.15.25)005

SILICON BRIDGE RECTIFIERS

GLASS PASSIVATED

BRIDGE RECTIFIERS

THRU

KBJ(10.15.25)10

Voltage Range

-50 to 1000 Volts

Current

-10/-15/-25 Ampere

Features

Rating to 1000V PRV

ldeal for printed circuit board

Low forward voltage drop, high current capability

Reliable low cost construction utilizing

molded plastic technique results in inexpensive

product

The plastic material has UL flammability

classification 94V-0

1.193(30.3)

1.169(20.7)

.189(4.8)

.173(4.4)

.150(3.8)

.134(3.4)

.119(.5)

.800(20.3)

.697(17.7)

.134(3.4)

.122(3.1)

.114(2.9)

.098(2.5)

.031(.8)

.023(.6)

.106(2.7)

.096(2.3)

.094(2.4)

.078(2.0)

.043(1.1)

.035(.9)

.402 .303 .303

.386 .287 .287

(10.2)

(7.7) (7.7)

(9.8) (7.3) (7.3)

.165(4.2)

.150(3.8)

Dimensions in inches and(millimeters)

Maximum Ratings and Electrical Characteristics

Rating at 25 °Cambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

KBJ

10005

KBJ

1001

KBJ

1501

KBJ

2501

100

KBJ

1002

KBJV

1502

KBJV

2502

200

140

200

KBJ

1004

KBJ

1504

KBJV

2504

400

280

400

10/15/25

3.0/3.2/4.2

KBJ

1006

KBJ

1506

KBJ

2506

600

420

600

KBJ

1008

KBJV

1508

KBJ

2508

800

560

800

KBJ

1010

KBJ

1510

KBJ

2510

1000

700

1000

T ype Number

KBJ

1505

KBJ

2505

.441(11.2)

.425(10.8)

Units

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Bridge Input Voltage

Maximum DC Blocking Voltage

Maximum Average Forward (With heatsink Note 2)

Rectified Current @T

= 100 °C ( Without heatsink)

Peak Forward Surge Current,

8.3 ms Single Half Sine-wave

Super imposed on Rated Load(JEDEC Method)

Maximum Instantaneous Forward Voltage @5.0A Peak

MaximumDC Blocking V

at Rated DC Reverse Current @T =25 °C

oltage @T =125 °C

A'S

10A

15A

25A

170

240350

1.05

5.0/10/10

500

120/240/510

I2 t Rating for fusing(t<8.3ms)

Typical Junction Capacitance

per element(Note 1)

Typical Thermal Resistance(Note 2)

Operating Temperature Range TJ

55/60/85

1.4/0.8/0.6

-55 to +150

Notes:

Temperature Range TSTG

Storage

° CW

°C

Notes: 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC

2. Device mounted on 150mmX150mmX1.6mm Cu Plaate Heatsink

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