FZT589TC datasheet, PDF - EEWORLD Datasheet

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FZT589TC: DescriptionPower Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin,; CategoryDiscrete semiconductor The transistor; File Size43KB，1 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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FZT589TC Overview

Power Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin,

FZT589TC Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Zetex Semiconductors
Reach Compliance Code	not_compliant
ECCN code	EAR99
Is Samacsys	N
Shell connection	COLLECTOR
Maximum collector current (IC)	1 A
Collector-based maximum capacity	15 pF
Collector-emitter maximum voltage	30 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JESD-30 code	R-PDSO-G4
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	4
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
VCEsat-Max	0.65 V
Base Number Matches	1

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SOT223 PNP SILICON PLANAR MEDIUM POWER

HIGH PERFORMANCE TRANSISTOR

ISSUE 2 - OCTOBER 1995

PARTMARKING DETAILS -

COMPLEMENTARY TYPES -

FZT589

FZT489

FZT589

C

E

C

B

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

I

B

P

tot

T

j

:T

stg

MIN.

-50

-30

-5

-100

-0.35

-0.65

-1.2

-1.1

100

80

40

100

15

300

MHz

pF

MAX.

VALUE

-50

-30

-5

-2

-1

-200

2

-55 to +150

UNIT

V

nA

V

CONDITIONS.

I

C

=-100

µ

A

I

C

=-1m

Α∗

I

E

=-100

µ

A

V

CB

=-30V

V

CES

=-30V

V

EB

=-4V

I

C

=-1A, I

B

=-100mA*

I

C

=-2A, I

B

=-200mA*

I

C

=-1A, I

B

=-100mA*

I

C

=-1A, V

CE

=-2V*

I

C

=-1mA, V

CE

=-2V*

I

C

=-500mA, V

CE

=-2V*

I

C

=-1A, V

CE

=-2V*

I

C

=-2A, V

CE

=-2V*

I

C

=-100mA, V

CE

=-5V

f=100MHz

V

CB

=-10V, f=1MHz

UNIT

V

A

mA

W

°C

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Base Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off Current

Collector Emitter Cut-Off Current

Emitter Cut-Off Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Base-Emitter

Turn-On Voltage

Static Forward

Current Transfer Ratio

Transition Frequency

Output Capacitance

SYMBOL

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

CES

I

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated)

f

T

C

obo

*Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

≤

2%

For typical characteristics graphs see FMMT549 datasheet

3 - 194

FZT589TC Related Products

	FZT589TC	FZT589TA
Description	Power Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin,	Power Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
Is it Rohs certified?	conform to	conform to
Maker	Zetex Semiconductors	Zetex Semiconductors
Reach Compliance Code	not_compliant	not_compliant
ECCN code	EAR99	EAR99
Is Samacsys	N	N
Shell connection	COLLECTOR	COLLECTOR
Maximum collector current (IC)	1 A	1 A
Collector-based maximum capacity	15 pF	15 pF
Collector-emitter maximum voltage	30 V	30 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	40	40
JESD-30 code	R-PDSO-G4	R-PDSO-G4
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	4	4
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	PNP	PNP
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	MATTE TIN	Matte Tin (Sn)
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	40	40
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz
VCEsat-Max	0.65 V	0.65 V
Base Number Matches	1	1

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