BZW03-C180T/R datasheet, PDF - EEWORLD Datasheet

BZW03-C180T/R: DescriptionDIODE 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Transient Suppressor; CategoryDiscrete semiconductor diode; File Size54KB，9 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BZW03-C180T/R Overview

DIODE 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Transient Suppressor

Parameter Name	Attribute value
Maker	NXP
package instruction	E-LALF-W2
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
Minimum breakdown voltage	168 V
Shell connection	ISOLATED
Maximum clamping voltage	249 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	E-LALF-W2
Maximum non-repetitive peak reverse power dissipation	500 W
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Package body material	GLASS
Package shape	ELLIPTICAL
Package form	LONG FORM
polarity	UNIDIRECTIONAL
Maximum power dissipation	1.75 W
Certification status	Not Qualified
Maximum reverse current	10 µA
surface mount	NO
technology	ZENER
Terminal form	WIRE
Terminal location	AXIAL

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