BYD31K113 datasheet, PDF - EEWORLD Datasheet

BYD31K113: DescriptionDIODE 0.32 A, 800 V, SILICON, SIGNAL DIODE, Signal Diode; CategoryDiscrete semiconductor diode; File Size198KB，7 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BYD31K113 Overview

DIODE 0.32 A, 800 V, SILICON, SIGNAL DIODE, Signal Diode

Parameter Name	Attribute value
Maker	NXP
package instruction	O-LALF-W2
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	O-LALF-W2
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Maximum output current	0.32 A
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	800 V
Maximum reverse recovery time	0.3 µs
surface mount	NO
technology	AVALANCHE
Terminal form	WIRE
Terminal location	AXIAL

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