TRANSISTOR VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-39/3, TO-39/3, 3 PIN, FET RF Power
Parameter Name | Attribute value |
Maker | NXP |
Parts packaging code | TO-39/3 |
package instruction | CYLINDRICAL, O-MBCY-W3 |
Contacts | 3 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Shell connection | SOURCE |
Configuration | SINGLE |
Minimum drain-source breakdown voltage | 40 V |
Maximum drain current (ID) | 1 A |
FET technology | METAL-OXIDE SEMICONDUCTOR |
highest frequency band | VERY HIGH FREQUENCY BAND |
JEDEC-95 code | TO-39 |
JESD-30 code | O-MBCY-W3 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 200 °C |
Package body material | METAL |
Package shape | ROUND |
Package form | CYLINDRICAL |
Polarity/channel type | N-CHANNEL |
Certification status | Not Qualified |
surface mount | NO |
Terminal form | WIRE |
Terminal location | BOTTOM |
transistor applications | AMPLIFIER |
Transistor component materials | SILICON |