MR758(Z) datasheet, PDF - EEWORLD Datasheet

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MR758(Z): DescriptionRectifier Diode, 1 Phase, 1 Element, 6A, 800V V(RRM), Silicon, PLASTIC, R-6, 2 PIN; CategoryDiscrete semiconductor diode; File Size49KB，2 Pages; ManufacturerGalaxy Microelectronics; Environmental Compliance

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MR758(Z) Overview

Rectifier Diode, 1 Phase, 1 Element, 6A, 800V V(RRM), Silicon, PLASTIC, R-6, 2 PIN

MR758(Z) Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Galaxy Microelectronics
package instruction	O-PALF-W2
Reach Compliance Code	unknown
Is Samacsys	N
application	GENERAL PURPOSE
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak forward current	400 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	6 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Maximum repetitive peak reverse voltage	800 V
Maximum reverse current	10 µA
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL
Base Number Matches	1

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FEATURES

GALAXY ELECTRICAL

MR750(Z)---M R760(Z)

VOLTAGE RANGE: 50 --- 1000 V

CURRENT: 6.0 A

PLASTIC SILICON RECTIFIER

Low cost

Diffused junction

Low leakage

Low forward voltage drop

High current capability

Easily cleaned witn Freon,Alcohol,lsopropanol

and similar solvents

The plastic material carries U/L recognition 94V-0

R-6

MECHANICAL DATA

Case:JEDEC R-6,molded plastic

Terminals: Axial lead ,solderable per

MIL- STD-202,Method 208

Polarity: Color band denotes cathode

Weight: 0.072 ounces,2.04 grams

Mounting position: Any

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

ambient temperature unless otherwise specified.

Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.

750

Maximum recurrent peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forw ard rectified current

9.5mm lead length,

=75

751

100

752

200

140

200

754

400

280

400

6.0

756

600

420

600

758

800

560

800

760

1000

700

1000

UNITS

RRM

RMS

F(AV)

Peak forw ard surge current

8.3ms single half-sine-w ave

superimposed on rated load

=125

FSM

400.0

Maximum instantaneous forw ard voltage

@ 6.0 A

Maximum reverse current

at rated DC blocking voltage

Typical junction capacitance

Typical thermal resistance

=25

=100

(Note1)

(Note2)

STG

1.0

10.0

100.0

120

- 55 ---- + 150

／Ｗ

Operating junction temperature range

Storage temperature range

2. Thermal resistance f rom junction to ambient.

NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.

www.galaxycn.com

Document Number 0260027

GALAXY ELECTRICAL

MR758(Z) Related Products

	MR758(Z)	MR760(Z)
Description	Rectifier Diode, 1 Phase, 1 Element, 6A, 800V V(RRM), Silicon, PLASTIC, R-6, 2 PIN	Rectifier Diode, 1 Phase, 1 Element, 6A, 1000V V(RRM), Silicon, PLASTIC, R-6, 2 PIN
Is it Rohs certified?	conform to	conform to
Maker	Galaxy Microelectronics	Galaxy Microelectronics
package instruction	O-PALF-W2	O-PALF-W2
Reach Compliance Code	unknown	unknown
Is Samacsys	N	N
application	GENERAL PURPOSE	GENERAL PURPOSE
Shell connection	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE
Diode component materials	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1 V	1 V
JESD-30 code	O-PALF-W2	O-PALF-W2
Maximum non-repetitive peak forward current	400 A	400 A
Number of components	1	1
Phase	1	1
Number of terminals	2	2
Maximum operating temperature	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C
Maximum output current	6 A	6 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND
Package form	LONG FORM	LONG FORM
Maximum repetitive peak reverse voltage	800 V	1000 V
Maximum reverse current	10 µA	10 µA
surface mount	NO	NO
Terminal form	WIRE	WIRE
Terminal location	AXIAL	AXIAL
Base Number Matches	1	1

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