FN1L4M-T2B datasheet, PDF - EEWORLD Datasheet

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FN1L4M-T2B: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, SC-59, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size84KB，3 Pages; ManufacturerNEC Electronics

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FN1L4M-T2B Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, SC-59, 3 PIN

FN1L4M-T2B Parametric

Parameter Name	Attribute value
Maker	NEC Electronics
package instruction	PLASTIC, SC-59, 3 PIN
Reach Compliance Code	unknown
Is Samacsys	N
Other features	BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	95
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	4000 ns
Maximum opening time (tons)	1000 ns
VCEsat-Max	0.2 V
Base Number Matches	1

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FN1L4M-T2B Related Products

	FN1L4M-T2B	FN1L4M-T1B	FN1L4M-L
Description	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, SC-59, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, SC-59, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, SC-59, 3 PIN
Maker	NEC Electronics	NEC Electronics	NEC Electronics
package instruction	PLASTIC, SC-59, 3 PIN	PLASTIC, SC-59, 3 PIN	PLASTIC, SC-59, 3 PIN
Reach Compliance Code	unknown	unknown	unknown
Other features	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	50 V	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	95	95	95
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	1	1
Number of terminals	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Maximum off time (toff)	4000 ns	4000 ns	4000 ns
Maximum opening time (tons)	1000 ns	1000 ns	1000 ns
VCEsat-Max	0.2 V	0.2 V	0.2 V
Base Number Matches	1	1	1
Is Samacsys	N	-	N

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