DIODE SILICON, RECTIFIER DIODE, Rectifier Diode
Parameter Name | Attribute value |
Maker | NXP |
package instruction | O-LALF-W2 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Shell connection | ISOLATED |
Configuration | SINGLE |
Diode component materials | SILICON |
Diode type | RECTIFIER DIODE |
JESD-30 code | O-LALF-W2 |
Number of components | 1 |
Number of terminals | 2 |
Maximum operating temperature | 175 °C |
Minimum operating temperature | -65 °C |
Package body material | GLASS |
Package shape | ROUND |
Package form | LONG FORM |
Certification status | Not Qualified |
surface mount | NO |
technology | AVALANCHE |
Terminal form | WIRE |
Terminal location | AXIAL |
933581010133 | 933581010113 | BY527T/R | |
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Description | DIODE SILICON, RECTIFIER DIODE, Rectifier Diode | DIODE SILICON, RECTIFIER DIODE, Rectifier Diode | DIODE 0.8 A, 1250 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode |
Maker | NXP | NXP | NXP |
package instruction | O-LALF-W2 | O-LALF-W2 | E-LALF-W2 |
Reach Compliance Code | unknown | unknown | unknown |
ECCN code | EAR99 | EAR99 | EAR99 |
Shell connection | ISOLATED | ISOLATED | ISOLATED |
Configuration | SINGLE | SINGLE | SINGLE |
Diode component materials | SILICON | SILICON | SILICON |
Diode type | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE |
JESD-30 code | O-LALF-W2 | O-LALF-W2 | E-LALF-W2 |
Number of components | 1 | 1 | 1 |
Number of terminals | 2 | 2 | 2 |
Maximum operating temperature | 175 °C | 175 °C | 175 °C |
Minimum operating temperature | -65 °C | -65 °C | -65 °C |
Package body material | GLASS | GLASS | GLASS |
Package shape | ROUND | ROUND | ELLIPTICAL |
Package form | LONG FORM | LONG FORM | LONG FORM |
Certification status | Not Qualified | Not Qualified | Not Qualified |
surface mount | NO | NO | NO |
technology | AVALANCHE | AVALANCHE | AVALANCHE |
Terminal form | WIRE | WIRE | WIRE |
Terminal location | AXIAL | AXIAL | AXIAL |