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933581010133

Description
DIODE SILICON, RECTIFIER DIODE, Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size47KB,7 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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933581010133 Overview

DIODE SILICON, RECTIFIER DIODE, Rectifier Diode

933581010133 Parametric

Parameter NameAttribute value
MakerNXP
package instructionO-LALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL

933581010133 Related Products

933581010133 933581010113 BY527T/R
Description DIODE SILICON, RECTIFIER DIODE, Rectifier Diode DIODE SILICON, RECTIFIER DIODE, Rectifier Diode DIODE 0.8 A, 1250 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode
Maker NXP NXP NXP
package instruction O-LALF-W2 O-LALF-W2 E-LALF-W2
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Shell connection ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code O-LALF-W2 O-LALF-W2 E-LALF-W2
Number of components 1 1 1
Number of terminals 2 2 2
Maximum operating temperature 175 °C 175 °C 175 °C
Minimum operating temperature -65 °C -65 °C -65 °C
Package body material GLASS GLASS GLASS
Package shape ROUND ROUND ELLIPTICAL
Package form LONG FORM LONG FORM LONG FORM
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
technology AVALANCHE AVALANCHE AVALANCHE
Terminal form WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL

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