3N163 datasheet, PDF - EEWORLD Datasheet

3N163: DescriptionSmall Signal Field-Effect Transistor, 0.05A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-206AF,; CategoryDiscrete semiconductor The transistor; File Size127KB，4 Pages; ManufacturerTEMIC; Websitehttp://www.temic.de/

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Small Signal Field-Effect Transistor, 0.05A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-206AF,

Parameter Name	Attribute value
Maker	TEMIC
Reach Compliance Code	unknown
Shell connection	SUBSTRATE
Configuration	SINGLE
Minimum drain-source breakdown voltage	40 V
Maximum drain current (ID)	0.05 A
Maximum drain-source on-resistance	250 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.7 pF
JEDEC-95 code	TO-206AF
JESD-30 code	O-MBCY-W4
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	P-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

	3N163	3N164
Description	Small Signal Field-Effect Transistor, 0.05A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-206AF,	Small Signal Field-Effect Transistor, 0.05A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-206AF,
Maker	TEMIC	TEMIC
Reach Compliance Code	unknown	unknown
Shell connection	SUBSTRATE	SUBSTRATE
Configuration	SINGLE	SINGLE
Minimum drain-source breakdown voltage	40 V	30 V
Maximum drain current (ID)	0.05 A	0.05 A
Maximum drain-source on-resistance	250 Ω	300 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.7 pF	0.7 pF
JEDEC-95 code	TO-206AF	TO-206AF
JESD-30 code	O-MBCY-W4	O-MBCY-W4
Number of components	1	1
Number of terminals	4	4
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	METAL	METAL
Package shape	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	P-CHANNEL	P-CHANNEL
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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