MITSUBISHI IGBT MODULES
CM200DY-12NF
HIGH POWER SWITCHING USE
CM200DY-12NF
¡I
C ...................................................................
200A
¡V
CES ............................................................
600V
¡Insulated
Type
¡2-elements
in a pack
APPLICATION
General purpose inverters & Servo controls, etc
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
Tc measured point (Base plate)
94
17
23
23
17
C2E1
E2
C1
E2 G2
4
G1 E1
12
2-φ6.5 MOUNTING HOLES
12
80±
0.25
12
4
3-M5 NUTS
20
(14)
48
13
18
4
TAB #110. t=0.5
16
7
16
7
16
7.5
C2E1
E2
C1
29
+1.0
–0.5
LABEL
CIRCUIT DIAGRAM
G1 E1
21.2
E2 G2
Feb.
2009
1
MITSUBISHI IGBT MODULES
CM200DY-12NF
HIGH POWER SWITCHING USE
MAXIMUM RATINGS
(Tj = 25°C, unless otherwise specified)
Symbol
V
CES
V
GES
I
C
I
CM
I
E (Note 1)
I
EM (Note 1)
P
C (Note 3)
T
j
T
stg
V
iso
—
—
—
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Torque strength
Weight
G-E Short
C-E Short
DC, T
C
’ = 93°C
*3
Pulse
Pulse
T
C
= 25°C
Conditions
Ratings
600
±20
200
400
200
400
650
–40 ~ +150
–40 ~ +125
2500
2.5 ~ 3.5
3.5 ~ 4.5
310
Unit
V
V
A
A
A
A
W
°C
°C
Vrms
N•m
N•m
g
(Note 2)
(Note 2)
Terminals to base plate, f = 60Hz, AC 1 minute
Main terminals M5 screw
Mounting M6 screw
Typical value
ELECTRICAL CHARACTERISTICS
(Tj = 25°C, unless otherwise specified)
Symbol
I
CES
V
GE(th)
I
GES
V
CE(sat)
C
ies
C
oes
C
res
Q
G
t
d(on)
t
r
t
d(off)
t
f
t
rr (Note 1)
Q
rr (Note 1)
V
EC(Note 1)
R
th(j-c)
Q
R
th(j-c)
R
R
th(c-f)
R
th(j-c’)
Q
R
G
Parameter
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Thermal resistance
*1
Contact thermal resistance
Thermal resistance
External gate resistance
Test conditions
V
CE
= V
CES
, V
GE
= 0V
I
C
= 20mA, V
CE
= 10V
±V
GE
= V
GES
, V
CE
= 0V
I
C
= 200A, V
GE
= 15V
V
CE
= 10V
V
GE
= 0V
V
CC
= 300V, I
C
= 200A, V
GE
= 15V
V
CC
= 300V, I
C
= 200A
V
GE
=
±15V
R
G
= 3.1Ω, Inductive load
I
E
= 200A
I
E
= 200A, V
GE
= 0V
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to heat sink, Thermal compound Applied
*2
(1/2 module)
Case temperature measured point is just under the chips
T
j
= 25°C
T
j
= 125°C
Min.
—
5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3.1
Limits
Typ.
—
6
—
1.7
1.7
—
—
—
800
—
—
—
—
—
3.5
—
—
—
0.07
—
—
Max.
1
7.5
0.5
2.2
—
30
3.7
1.2
—
120
120
300
300
150
—
2.6
0.19
0.35
—
0.13
*3
31
Unit
mA
V
µA
V
nF
nF
nF
nC
ns
ns
ns
ns
ns
µC
V
K/W
K/W
K/W
K/W
Ω
*
1 : Case temperature (Tc) measured point is shown in page OUTLINE DRAWING.
*
2 : Typical value is measured by using thermally conductive grease of
λ
= 0.9[W/(m • K)].
*
3 : Case temperature (Tc’) measured point is just under the chips.
If you use this value, R
th(f-a)
should be measured just under the chips.
Note 1. I
E
, V
EC
, t
rr
& Q
rr
represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
jmax
rating.
3. Junction temperature (T
j
) should not increase beyond 150°C.
Feb.
2009
2
MITSUBISHI IGBT MODULES
CM200DY-12NF
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
400
V
GE
=
20V
300
15
13
4
T
j
= 25°C
12
V
GE
= 15V
3
200
11
2
100
8
0
0
2
4
6
8
10
9
10
1
T
j
= 25°C
T
j
= 125°C
0
0
100
200
300
400
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
3
7
10
T
j
= 25°C
EMITTER CURRENT I
E
(A)
8
5
3
2
6
10
2
7
5
3
2
4
I
C
= 200A
I
C
= 400A
2
I
C
= 80A
0
6
8
10
12
14
16
18
20
T
j
= 25°C
T
j
= 125°C
0
1
2
3
4
5
10
1
GATE-EMITTER VOLTAGE V
GE
(V)
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
CAPACITANCE–V
CE
CHARACTERISTICS
(TYPICAL)
10
2
CAPACITANCE C
ies
, C
oes
, C
res
(nF)
7
5
3
2
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10
3
7
5
3
2
t
f
t
d(off)
t
d(on)
t
r
Conditions:
V
CC
= 300V
V
GE
=
±15V
R
G
= 3.1Ω
T
j
= 125°C
Inductive load
2
3
5 7
10
2
2
3
5 7
10
3
SWITCHING TIME (ns)
C
ies
10
1
7
5
3
2
10
2
7
5
3
2
C
oes
C
res
10
0
7
5
3
2
10
1
7
5
3
2
V
GE
= 0V
10
–1 –1
10
2 3 5 7
10
0
2 3 5 7
10
1
2 3 5 7
10
2
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
10
0 1
10
COLLECTOR CURRENT I
C
(A)
Feb.
2009
3
京公网安备 11010802033920号
EEWORLD
