MITSUBISHI IGBT MODULES
CM50DU-24H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
CM50DU-24H
●
I
C .....................................................................
50A
●
V
CES .......................................................
1200V
●
Insulated Type
●
2-elements in a pack
APPLICATION
UPS, NC machine, AC-Drive control, Servo, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
T
C
measured point
94
7
17
80
±0.25
23
23
2–φ6.5
MOUNTING HOLES
4
E2 G2
24
C2E1
E2
C1
18
G1E1
4 11
48
12
3–M5NUTS
12mm deep
16 2.5
25
2.5 16
13.5
E2 G2
TAB
7.5
4
#110. t=0.5
C2E1
E2
13
CM
C1
G1 E1
30
–0.5
+1
LABEL
21.2
CIRCUIT DIAGRAM
Feb. 2009
1
MITSUBISHI IGBT MODULES
CM50DU-24H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
(Tj = 25
°
C, unless otherwise specified)
MAXIMUM RATINGS
Symbol
V
CES
V
GES
I
C
I
CM
I
E (Note 2)
I
EM (Note 2)
P
C (Note 3)
T
j
T
stg
V
iso
—
—
Item
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
V
GE
= 0V
V
CE
= 0V
T
C
= 25°C
Pulse
T
C
= 25°C
Pulse
T
C
= 25°C
Conditions
Ratings
1200
±20
50
100
50
100
400
–40 ~ +150
–40 ~ +125
2500
2.5 ~ 3.5
3.5 ~ 4.5
310
Unit
V
V
A
A
A
A
W
°C
°C
Vrms
N·m
N·m
g
(Note 1)
(Note 1)
—
—
Charged part to base plate, f = 60Hz, AC 1 minute
Main terminals M5 screw
Mounting M6 screw
Typical value
ELECTRICAL CHARACTERISTICS
Symbol
I
CES
Item
(Tj = 25
°
C, unless otherwise specified)
Test Conditions
V
CE
= V
CES
, V
GE
= 0V
I
C
= 5mA, V
CE
= 10V
±V
GE
= V
GES
, V
CE
= 0V
I
C
= 50A, V
GE
= 15V
V
CE
= 10V
V
GE
= 0V
V
CC
= 600V, I
C
= 50A, V
GE
= 15V
V
CC
= 600V, I
C
= 50A
V
GE
=
±15V
R
G
= 6.3Ω
Resistive load
I
E
= 50A, V
GE
= 0V
I
E
= 50A,
die / dt = –100A /
µs
Junction to case, IGBT part (Per 1/2 module)
Junction to case, FWDi part (Per 1/2 module)
Case to heat sink, conductive grease applied
(Per 1/2 module)
(Note 6)
(Note 4)
T
j
= 25°C
T
j
= 125°C
Collector cutoff current
Gate-emitter
V
GE(th)
threshold voltage
Gate-leakage current
I
GES
Collector-emitter
V
CE(sat)
saturation voltage
Input capacitance
C
ies
Output capacitance
C
oes
Reverse transfer capacitance
C
res
Q
G
Total gate charge
t
d (on)
Turn-on delay time
t
r
Turn-on rise time
t
d (off)
Turn-off delay time
t
f
Turn-off fall time
V
EC(Note 2)
Emitter-collector voltage
t
rr (Note 2)
Reverse recovery time
Q
rr (Note 2)
Reverse recovery charge
R
th(j-c)Q
Thermal resistance (Note 5)
R
th(j-c)R
R
th(c-f)
Contact thermal resistance
Min
—
4.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Limits
Typ
—
6
—
2.9
2.85
—
—
—
187
—
—
—
—
—
—
0.28
—
—
0.07
Max
1
7.5
0.5
3.7
—
7.5
2.6
1.5
—
80
200
150
350
3.2
300
—
0.31
0.7
—
Unit
mA
V
µA
V
nF
nF
nF
nC
ns
ns
ns
ns
V
ns
µC
K/W
K/W
K/W
Note 1.
2.
3.
4.
5.
6.
Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
jmax
rating.
I
E
, V
EC
, t
rr
, Q
rr
& die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode.
Junction temperature (T
j
) should not increase beyond 150°C.
Pulse width and repetition rate should be such as to cause negligible temperature rise.
Case temperature (T
C
) measured point is shown in page OUTLINE DRAWING.
Typical value is measured by using thermally conductive grease of
λ
= 0.9[W/(m • K)].
Feb. 2009
2
MITSUBISHI IGBT MODULES
CM50DU-24H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
100
COLLECTOR CURRENT I
C
(A)
TRANSFER CHARACTERISTICS
(TYPICAL)
100
COLLECTOR CURRENT I
C
(A)
V
GE
= 20
(V)
T
j
= 25°C
15
12
V
CE
= 10V
75
11
50
10
25
9
8
0
0
2
4
6
8
10
75
50
25
T
j
= 25°C
T
j
= 125°C
0
0
4
8
12
16
20
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(V)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10
T
j
= 25°C
5
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
4
8
3
6
I
C
= 100A
I
C
= 50A
2
I
C
= 20A
2
4
1
0
0
25
50
75
100
0
0
4
8
12
16
20
COLLECTOR CURRENT I
C
(A)
GATE-EMITTER VOLTAGE V
GE
(V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
3
2
CAPACITANCE CHARACTERISTICS
(TYPICAL)
10
1
CAPACITANCE C
ies
, C
oes
, C
res
(nF)
7
5
3
2
T
j
= 25°C
C
ies
EMITTER CURRENT I
E
(A)
10
2
7
5
3
2
10
0
7
5
3
2
C
oes
C
res
10
–1
7
5
3
2
10
1
7
5
3
1.0
1.5
2.0
2.5
3.0
3.5
V
GE
= 0V
10
–2 –1
10
2 3 5 7
10
0
2 3 5 7
10
1
2 3 5 7
10
2
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
Feb. 2009
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
3
MITSUBISHI IGBT MODULES
CM50DU-24H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
10
3
t
f
t
d(off)
REVERSE RECOVERY TIME t
rr
(ns)
7
T
j
= 125°C
5
SWITCHING TIMES (ns)
3
2
5
3
2
5
3
2
10
2
7
5
3
2
t
d(on)
t
r
10
2
7
5
3
2
t
rr
10
1
7
5
3
2
10
1
7
5
3
2
I
rr
10
0 0
10
V
CC
= 600V
V
GE
=
±15V
R
G
= 6.3Ω
2
3
5 7
10
1
2
3
5 7
10
2
10
1 0
10
2
3
5 7
10
1
2
3
5 7
10
2
10
0
COLLECTOR CURRENT I
C
(A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part)
10
–3
2 3 5 7
10
–2
2 3 5 7
10
–1
2 3 5 7
10
0
2 3 5 7
10
1
10
1
7
Single Pulse
5
3
T
C
= 25°C
2
7
5
3
2
7
5
3
2
7
5
3
2
EMITTER CURRENT I
E
(A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi part)
10
–3
2 3 5 7
10
–2
2 3 5 7
10
–1
2 3 5 7
10
0
2 3 5 7
10
1
10
1
7
Single Pulse
5
3
T
C
= 25°C
2
7
5
3
2
7
5
3
2
7
5
3
2
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th(j – c)
10
0
Per unit base = R
th(j – c)
= 0.31K/W
3
2
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th(j – c)
10
0
Per unit base = R
th(j – c)
= 0.7K/W
3
2
10
–1
10
–1
7
5
3
2
7
5
3
2
10
–1
10
–1
7
5
3
2
7
5
3
2
10
–2
10
–2
10
–2
10
–2
10
–3
10
–3
10
–5
2 3 5 7
10
–4
2 3 5 7
10
–3
TIME (s)
10
–3
10
–3
10
–5
2 3 5 7
10
–4
2 3 5 7
10
–3
TIME (s)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
GATE-EMITTER VOLTAGE V
GE
(V)
I
C
= 50A
15
V
CC
= 400V
V
CC
= 600V
10
5
0
0
50
100
150
200
250
GATE CHARGE Q
G
(nC)
Feb. 2009
4
REVERSE RECOVERY CURRENT I
rr
(A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
10
3
10
2
– di /dt = 100A /µs
7
7
T
j
= 25°C
MCU
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