Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
Maker | Philips Semiconductors (NXP Semiconductors N.V.) |
package instruction | , |
Reach Compliance Code | unknown |
Configuration | Single |
Maximum drain current (Abs) (ID) | 2.5 A |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JESD-609 code | e3 |
Humidity sensitivity level | 1 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Polarity/channel type | N-CHANNEL |
Maximum power dissipation(Abs) | 0.83 W |
surface mount | YES |
Terminal surface | Matte Tin (Sn) |
Base Number Matches | 1 |