BFS17LTC datasheet, PDF - EEWORLD Datasheet

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BFS17LTC: DescriptionRF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN; CategoryDiscrete semiconductor The transistor; File Size68KB，2 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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BFS17LTC Overview

RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN

BFS17LTC Parametric

Parameter Name	Attribute value
Maker	Zetex Semiconductors
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.025 A
Collector-based maximum capacity	1.5 pF
Collector-emitter maximum voltage	15 V
Configuration	SINGLE
Minimum DC current gain (hFE)	25
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	1300 MHz
Base Number Matches	1

BFS17LTC Related Products

	BFS17LTC	BFS17LTA	BFS17TC
Description	RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN	RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN	RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
Maker	Zetex Semiconductors	Zetex Semiconductors	Zetex Semiconductors
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.025 A	0.025 A	0.025 A
Collector-based maximum capacity	1.5 pF	1.5 pF	1.5 pF
Collector-emitter maximum voltage	15 V	15 V	15 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	25	25	20
highest frequency band	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	1	1
Number of terminals	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	1300 MHz	1300 MHz	1300 MHz
Base Number Matches	1	1	1

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