JAN1N5520C-1 datasheet, PDF - EEWORLD Datasheet

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JAN1N5520C-1: DescriptionZener Diode, 3.9V V(Z), 2%, 0.5W, Silicon, Unidirectional, DO-35, DO-7, 2 PIN; CategoryDiscrete semiconductor diode; File Size144KB，19 Pages; ManufacturerCompensated Devices Inc.

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JAN1N5520C-1 Overview

Zener Diode, 3.9V V(Z), 2%, 0.5W, Silicon, Unidirectional, DO-35, DO-7, 2 PIN

JAN1N5520C-1 Parametric

Parameter Name	Attribute value
Maker	Compensated Devices Inc.
package instruction	O-XALF-W2
Reach Compliance Code	unknown
Other features	METALLURGICALLY BONDED
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	ZENER DIODE
JEDEC-95 code	DO-35
JESD-30 code	O-XALF-W2
Number of components	1
Number of terminals	2
Package body material	UNSPECIFIED
Package shape	ROUND
Package form	LONG FORM
polarity	UNIDIRECTIONAL
Maximum power dissipation	0.5 W
Certification status	Not Qualified
Guideline	MIL-19500/437E
Nominal reference voltage	3.9 V
surface mount	NO
technology	ZENER
Terminal form	WIRE
Terminal location	AXIAL
Maximum voltage tolerance	2%
Working test current	20 mA
Base Number Matches	1

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The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 18 January 2005.

INCH POUND

MIL-PRF-19500/437E

18 October 2004

SUPERSEDING

MIL-PRF-19500/437D

15 September 1997

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR TYPES,

1N5518B-1, 1N5518C-1, 1N5518D-1 THROUGH 1N5546B-1, 1N5546C-1, 1N5546D-1,

1N5518BUR-1, 1N5518CUR-1, 1N5518DUR-1 THROUGH 1N5546BUR-1, 1N5546CUR-1, 1N5546DUR-1

JAN, JANTX, JANTXV, JANHC, AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

The requirements for acquiring the product described herein shall consist of

this specification sheet and MIL-PRF-19500.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for 500 milliwatt, silicon, low-noise, voltage

regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Three levels of product assurance

are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance

for each unencapsulated device type die. For JANHC and JANKC quality levels (see 6.5).

1.2 Physical dimensions. See figures 1 (DO-7 and DO-35), 2 (DO-213AA), and 3 (JANHC and JANKC).

* 1.3 Maximum ratings. Maximum ratings are shown in 3.8 herein and as follows:

PT = 500 mW (DO-7 and D0-35) at TL = +50°C, L = .375 inch (9.53 mm); both ends of case or

diode body to heat sink at L = .375 inch (9.53 mm). (Derate IZ to 0.0 mA dc at +175°C).

PT = 500 mW (D0-213AA) at TEC = +125°C. (Derate to 0 at +175°C).

-65°C

≤

+175°C; -65°C

≤

TSTG

≤

+175°C.

* 1.4 Primary electrical characteristics. Primary electrical characteristic see 3.8 herein and as follows:

3.3 V dc

≤

33 V dc.

θJL

= 250°C/W (maximum) at L = .375 inch (9.53 mm) (D0-7 and D0-35).

θJEC

= 100°C/W (maximum) junction to end-caps (D0-213AA).

For derating see figures 4 and 5.

Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus,

ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to

Semiconductor@dscc.dla.mil.

Since

contact information can change, you may want to verify the currency of this address information using the ASSIST

Online database at

http://www.dodssp.daps.mil.

AMSC N/A

FSC 5961

MIL-PRF-19500/437E

2. APPLICABLE DOCUMENTS

* 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This

section does not include documents cited in other sections of this specification or recommended for additional

information or as examples. While every effort has been made to ensure the completeness of this list, document

users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this

specification, whether or not they are listed.

2.2 Government documents.

* 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a

part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are

those cited in the solicitation or contract.

DEPARTMENT OF DEFENSE SPECIFICATIONS

MIL-PRF-19500

Semiconductor Devices, General Specification for.

DEPARTMENT OF DEFENSE STANDARDS

MIL-STD-750

Test Methods for Semiconductor Devices.

* (Copies of these documents are available online at

http://assist.daps.dla.mil/quicksearch/

http://www.dodssp.daps.mil.

or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,

Philadelphia, PA

19111-5094.)

2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited

herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws

and regulations unless a specific exemption has been obtained.

3. REQUIREMENTS

* 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.

3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a

manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)

before contract award (see 4.2 and 6.3).

3.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein shall be as specified in

MIL-PRF-19500.

C-.......................... 2 percent voltage tolerance devices.

D-.......................... 1 percent voltage tolerance devices.

JANH .................... High reliability product assurance level for unencapsulated devices.

JANK .................... Space reliability product assurance level for unencapsulated devices.

UR ........................ Unleaded or surface mounted diodes with round end-caps.

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