Power Field-Effect Transistor, 8A I(D), 450V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | Motorola ( NXP ) |
package instruction | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code | unknown |
Other features | LEADFORM OPTIONS ARE AVAILABLE |
Shell connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 450 V |
Maximum drain current (Abs) (ID) | 8 A |
Maximum drain current (ID) | 8 A |
Maximum drain-source on-resistance | 0.85 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
Maximum feedback capacitance (Crss) | 150 pF |
JEDEC-95 code | TO-220AB |
JESD-30 code | R-PSFM-T3 |
JESD-609 code | e0 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | N-CHANNEL |
Maximum power consumption environment | 125 W |
Maximum power dissipation(Abs) | 125 W |
Maximum pulsed drain current (IDM) | 32 A |
Certification status | Not Qualified |
surface mount | NO |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | THROUGH-HOLE |
Terminal location | SINGLE |
Maximum time at peak reflow temperature | NOT SPECIFIED |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Maximum off time (toff) | 120 ns |
Maximum opening time (tons) | 50 ns |
Base Number Matches | 1 |