IRFF9120-JQR-BE1 datasheet, PDF

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IRFF9120-JQR-BE1: Description4A, 100V, 0.69ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size19KB，2 Pages; ManufacturerSEMELAB; Environmental Compliance

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IRFF9120-JQR-BE1 Overview

4A, 100V, 0.69ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN

IRFF9120-JQR-BE1 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	SEMELAB
Parts packaging code	BCY
package instruction	CYLINDRICAL, O-MBCY-W3
Contacts	2
Reach Compliance Code	compliant
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (ID)	4 A
Maximum drain-source on-resistance	0.69 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-205AF
JESD-30 code	O-MBCY-W3
JESD-609 code	e1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	P-CHANNEL
Maximum pulsed drain current (IDM)	16 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN SILVER COPPER
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Base Number Matches	1

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2N6845

IRFF9120

MECHANICAL DATA

Dimensions in mm (inches)

8.64 (0.34)

9.40 (0.37)

8.01 (0.315)

9.01 (0.355)

4.06 (0.16)

4.57 (0.18)

N–CHANNEL

ENHANCEMENT MODE

HIGH VOLTAGE

POWER MOSFETS

12.70

(0.500)

min.

0.89 max.

(0.035)

0.41 (0.016)

0.53 (0.021)

dia.

5.08 (0.200)

typ.

DSS

D(cont)

DS(on)

2.54

(0.100)

-100V

-4.0A

Ω

0.60Ω

FEATURES

• HERMETICALLY SEALED TO–39 METAL

PACKAGE

• SIMPLE DRIVE REQUIREMENTS

• LIGHTWEIGHT

0.74 (0.029)

1.14 (0.045)

0.71 (0.028)

0.53 (0.021)

45°

• SCREENING OPTIONS AVAILABLE

PIN 3 – Drain

TO–39 (TO-205AF) METAL PACKAGE

PIN1 – Source

PIN 2 – Gate

ABSOLUTE MAXIMUM RATINGS

case

= 25°C unless otherwise stated)

, T

stg

θJC

Notes

1) Repetitive Rating – Pulse width limited by maximum junction temperature.

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab encourages customers to verify that datasheets are current before placing orders.

Gate – Source Voltage

Continuous Drain Current

Pulsed Drain Current

Power Dissipation @ T

case

= 25°C

Linear Derating Factor

Operating and Storage Temperature Range

Package Mounting Surface Temperature (for 5 sec)

Thermal Resistance Junction to Case

= 0 , T

case

= 25°C)

= 0 , T

case

= 100°C)

±20V

-4.0A

-2.6A

-16A

20 W

0.16 W/°C

–55 to 150°C

300°C

6.25°C/W

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail:

sales@semelab.co.uk

Website:

http://www.semelab.co.uk

Document Number 5748

Issue 1

IRFF9120-JQR-BE1 Related Products

	IRFF9120-JQR-BE1	2N6845-JQR-BE1	2N6845-JQR-AE1	2N6845-QR-BR1	2N6845-JQRE1
Description	4A, 100V, 0.69ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN	4A, 100V, 0.69ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN	4A, 100V, 0.69ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN	4A, 100V, 0.69ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN	4A, 100V, 0.69ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN
Is it lead-free?	Lead free	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to
Parts packaging code	BCY	BCY	BCY	BCY	BCY
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Contacts	2	2	2	2	2
Reach Compliance Code	compliant	compliant	compliant	compliant	compli
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V	100 V	100 V	100 V	100 V
Maximum drain current (ID)	4 A	4 A	4 A	4 A	4 A
Maximum drain-source on-resistance	0.69 Ω	0.69 Ω	0.69 Ω	0.69 Ω	0.69 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-205AF	TO-205AF	TO-205AF	TO-205AF	TO-205AF
JESD-30 code	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
JESD-609 code	e1	e1	e1	e1	e1
Number of components	1	1	1	1	1
Number of terminals	3	3	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	METAL	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL
Maximum pulsed drain current (IDM)	16 A	16 A	16 A	16 A	16 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO
Terminal surface	TIN SILVER COPPER	TIN SILVER COPPER	TIN SILVER COPPER	TIN SILVER COPPER	TIN SILVER COPPER
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1	-

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