ECH8675 datasheet, PDF - EEWORLD Datasheet

ECH8675: DescriptionGeneral-Purpose Switching Device Applications; CategoryDiscrete semiconductor The transistor; File Size271KB，4 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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ECH8675 Overview

General-Purpose Switching Device Applications

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PDSO-F8
Contacts	8
Reach Compliance Code	unknow
ECCN code	EAR99
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	20 V
Maximum drain current (Abs) (ID)	4.5 A
Maximum drain current (ID)	4.5 A
Maximum drain-source on-resistance	0.046 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-F8
Number of components	2
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	1.5 W
Maximum pulsed drain current (IDM)	30 A
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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