NAND Gate, HSC Series, 4-Func, 2-Input, CMOS, CDFP14,
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | Plessey Semiconductors Ltd. |
Reach Compliance Code | unknown |
Other features | RADIATION HARD CMOS/SILICON ON SAPPHIRE (SOS) TECHNOLOGY |
series | HSC |
JESD-30 code | R-CDFP-F14 |
JESD-609 code | e0 |
Load capacitance (CL) | 50 pF |
Logic integrated circuit type | NAND GATE |
MaximumI(ol) | 0.009 A |
Number of functions | 4 |
Number of entries | 2 |
Number of terminals | 14 |
Maximum operating temperature | 125 °C |
Minimum operating temperature | -55 °C |
Package body material | CERAMIC, METAL-SEALED COFIRED |
encapsulated code | DFP |
Encapsulate equivalent code | FL14,.3 |
Package shape | RECTANGULAR |
Package form | FLATPACK |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
power supply | 5 V |
Prop。Delay @ Nom-Sup | 22 ns |
propagation delay (tpd) | 20 ns |
Certification status | Not Qualified |
Schmitt trigger | NO |
Filter level | 38535V;38534K;883S |
Maximum supply voltage (Vsup) | 5.5 V |
Minimum supply voltage (Vsup) | 4.5 V |
Nominal supply voltage (Vsup) | 5 V |
surface mount | YES |
technology | CMOS |
Temperature level | MILITARY |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | FLAT |
Terminal pitch | 1.27 mm |
Terminal location | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED |
total dose | 300k Rad(Si) V |
Base Number Matches | 1 |