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DMF2835-222

Description
Mixer Diode, Low Barrier, S Band, Silicon, ROHS COMPLIANT, HERMETIC SEALED, CASE 222, 3 PIN
CategoryDiscrete semiconductor    diode   
File Size170KB,22 Pages
ManufacturerSkyworks
Websitehttp://www.skyworksinc.com
Environmental Compliance
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DMF2835-222 Overview

Mixer Diode, Low Barrier, S Band, Silicon, ROHS COMPLIANT, HERMETIC SEALED, CASE 222, 3 PIN

DMF2835-222 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerSkyworks
package instructionS-CTMW-F3
Contacts3
Manufacturer packaging codeCASE 222
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materialsSILICON
Diode typeMIXER DIODE
frequency bandS BAND
JESD-30 codeS-CTMW-F3
Humidity sensitivity level1
Number of components2
Number of terminals3
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeSQUARE
Package formMICROWAVE
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
surface mountYES
technologySCHOTTKY
Terminal formFLAT
Terminal locationTRIPLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Schottky barrier typeLOW BARRIER
Base Number Matches1
DATA SHEET
DME, DMF, DMJ Series: Silicon Beam-Lead Schottky Mixer
Diodes – Singles, Pairs & Quads, Bondable & Packaged Chips
Applications
Microwave Integrated Circuits
Mixers
Detectors
Features
Low 1/f noise
Low intermodulation distortion
Epoxy and hermetically sealed packages
Statistical Process Control wafer fabrication
Packages rated MSL1, 260 C per JEDEC J-STD-020)
Skyworks offers lead (Pb)-free, RoHS (Restriction of
Hazardous Substances) compliant packaging.
Beam-lead Schottky barrier diodes are categorized by universal
mixer applications in four frequency ranges: S, C, X, Ku, K, and Ka
bands as noted in Table 1. They may also be used as modulators
and high-speed switches.
Beam-lead diodes are suited for balanced mixers, due to their low
parasitics and uniformity.
Description
Skyworks beam-lead silicon Schottky barrier mixer diodes are
designed for applications through 40 GHz. The beam-lead design
reduces the problem of bonding to the very small area
characteristic of low capacitance junctions.
Beam-lead Schottky barrier mixer diodes are made by the
deposition of a suitable barrier metal on an epitaxial silicon
substrate to form the junction. The process and choice of
materials result in low series resistance with a narrow spread of
capacitance values for close impedance control.
A variety of forward voltages are available ranging from low values
for low, or starved, local oscillator drive levels to high values for high
drive, low distortion mixer applications. Beam-lead diodes are
available in a wide range of packages. Capacitance ranges and
series resistances are comparable with the packaged devices that
are available up to, and including, the Ka-band. Unpackaged diodes
are well suited for use in Microwave Integrated Circuits (MICs). The
packaged devices are designed to be inserted as hybrid elements in
strip, transmission line applications.
The absolute maximum ratings of the DME, DMF, and DMJ series
of Schottky mixer diodes are provided in Table 2. Electrical and
physical specifications are provided in Tables 3 through 15.
Typical performance characteristics are shown in Figures 1
through 3. Typical mixer circuits are shown in Figure 4.
T
a
ble 1. Frequency Table
Frequency Band
S
C
X
Ku
K
Ka
Frequency
(GHz)
2 to 4
4 to 8
8.2 to 12.4
12.4 to 18.0
18.0 to 26.5
26.5 to 40.0
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • sales@skyworksinc.com • www.skyworksinc.com
200725B • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice • October 2, 2009
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