150 A, SILICON, RECTIFIER DIODE, DO-8
| Parameter Name | Attribute value |
| Maker | EDAL |
| package instruction | O-MUPM-H1 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| Other features | LEAKAGE CURRENT IS NOT AT 25 DEG C |
| application | POWER |
| Shell connection | CATHODE |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | RECTIFIER DIODE |
| Maximum forward voltage (VF) | 1.1 V |
| JEDEC-95 code | DO-8 |
| JESD-30 code | O-MUPM-H1 |
| Maximum non-repetitive peak forward current | 2100 A |
| Number of components | 1 |
| Phase | 1 |
| Number of terminals | 1 |
| Maximum operating temperature | 190 °C |
| Minimum operating temperature | -65 °C |
| Maximum output current | 150 A |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | POST/STUD MOUNT |
| Certification status | Not Qualified |
| Maximum repetitive peak reverse voltage | 800 V |
| Maximum reverse current | 5000 µA |
| surface mount | NO |
| Terminal form | HIGH CURRENT CABLE |
| Terminal location | UPPER |
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