SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
2N3439C3A / 2N3440C3A
2N3439C3B / 2N3440C3B
2N3439C3C / 2N3440C3C
•
•
•
•
•
High Voltage
Hermetic Ceramic Surface Mount Package.
Variant B to MIL-PRF-19500/368 outline
Ideally suited for drivers in high-voltage low current
inverters, switching and series regulators.
Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise stated)
Symbols
VCBO
VCEO
VEBO
IC
IB
PD
PD
TJ
Tstg
Parameters
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Collector Current – Continuous
Base Current
TA = 25°C
Total Power Dissipation at
Derate Above 25°C
TSP = 25°C
Total Power Dissipation at
Derate Above 25°C
Junction Temperature Range
Storage Temperature Range
2N3439
450V
350V
2N3440
300V
250V
7V
1.0A
0.5A
800mW
4.6mW/°C
1.5W
8.6mW/°C
-65 to +200°C
-65 to +200°C
THERMAL PROPERTIES
Symbols
R
θJA
R
θJSP
Parameters
Thermal Resistance, Junction To Ambient
Thermal Resistance, Junction To Solder Pads
Max.
218.7
116.7
Units
°C/W
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Document Number 8877
Issue 2
Page 1 of 4
Website:
http://www.semelab-tt.com
SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
2N3439C3A, 2N3439C3B, 2N3439C3C
2N3440C3A, 2N3440C3B, 2N3440C3C
2N3439C3A, 2N3439C3B, 2N3439C3C
ELECTRICAL CHARACTERISTICS
Symbols
ICEO
(TA = 25°C unless otherwise stated)
Parameters
Collector Cut-Off Current
Test Conditions
VCE = 300V
VCB = 450V
IB = 0
IE = 0
IE = 0
TA = 150°C
Min.
Typ
Max.
2
5
2
10
5
10
0.5
Units
ICBO
Collector Cut-Off Current
VCB = 360V
µA
ICEX
IEBO
VCE(sat)
VBE(sat)
(1)
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage
VCE = 450V
VEB = 7V
IC = 50mA
IC = 50mA
IC = 0.2mA
VBE = -1.5V
IC = 0
IB = 4mA
IB = 4mA
VCE = 10V
VCE = 10V
VCE = 10V
TA = -55°C
10
30
40
15
(1)
V
1.3
hFE
(1)
Forward-current transfer
ratio
IC = 2mA
IC = 20mA
160
DYNAMIC CHARACTERISTICS
hfe
Small signal forward-current
transfer ratio
Magnitude of Common-
Emitter Small-Signal Short-
Circuit forward Current,
Transfer Ratio
Output Capacitance
IC = 5mA
f = 1.0KHz
IC = 10mA
f = 5MHz
VCB = 10V
f = 1.0MHz
VEB = 5V
f = 1.0MHz
IC = 20mA
IB1 = 2mA
IC = 20mA
IB1 = - IB2 = 2mA
VCC = 200V
VCC = 200V
IC = 0
IE = 0
VCE = 10V
3
15
MHz
VCE = 10V
25
| hfe |
Cobo
Cibo
ton
toff
10
pF
Input Capacitance
75
pF
Turn-On Time
1.0
µs
10
Turn-Off Time
Notes
(1) Pulse Width
≤
380us,
δ ≤
2%
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 8877
Issue 2
Page 2 of 4
SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
2N3439C3A, 2N3439C3B, 2N3439C3C
2N3440C3A, 2N3440C3B, 2N3440C3C
2N3440C3A, 2N3440C3B, 2N3440C3C
ELECTRICAL CHARACTERISTICS
Symbols
ICEO
(TA = 25°C unless otherwise stated)
Parameters
Collector Cut-Off Current
Test Conditions
VCE = 200V
VCB = 300V
IB = 0
IE = 0
IE = 0
TA = 150°C
Min.
Typ
Max.
2
5
2
10
5
10
0.5
Units
ICBO
Collector Cut-Off Current
VCB = 250V
µA
ICEX
IEBO
VCE(sat)
VBE(sat)
(1)
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage
VCE = 300V
VEB = 7V
IC = 50mA
IC = 50mA
IC = 0.2mA
VBE = -1.5V
IC = 0
IB = 4mA
IB = 4mA
VCE = 10V
VCE = 10V
VCE = 10V
TA = -55°C
10
30
40
15
(1)
V
1.3
hFE
(1)
Forward-current transfer
ratio
IC = 2mA
IC = 20mA
160
DYNAMIC CHARACTERISTICS
hfe
Small signal forward-current
transfer ratio
Magnitude of Common-
Emitter Small-Signal Short-
Circuit forward Current,
Transfer Ratio
Output Capacitance
IC = 5mA
f = 1.0KHz
IC = 10mA
f = 5MHz
VCB = 10V
f = 1.0MHz
VEB = 5V
f = 1.0MHz
IC = 20mA
IB1 = 2mA
IC = 20mA
IB1 = - IB2 = 2mA
VCC = 200V
VCC = 200V
IC = 0
IE = 0
VCE = 10V
3
15
MHz
VCE = 10V
25
| hfe |
Cobo
Cibo
ton
toff
10
pF
Input Capacitance
75
pF
Turn-On Time
1.0
µs
10
Turn-Off Time
Notes
(1) Pulse Width
≤
380us,
δ ≤
2%
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 8877
Issue 2
Page 3 of 4
SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
2N3439C3A, 2N3439C3B, 2N3439C3C
2N3440C3A, 2N3440C3B, 2N3440C3C
MECHANICAL DATA
Dimensions in mm (inches)
5.59 ± 0.13
(0.22 ± 0.005)
0.25 ± 0.03
(0.01 ± 0.001)
1.40 ± 0.15
(0.055 ± 0.006)
0.64 ± 0.08
(0.025 ± 0.003)
0.23 rad.
(0.009)
3
2
1.27 ± 0.05
(0.05 ± 0.002)
3.81 ± 0.13
(0.15 ± 0.005)
4
1
0.23 min.
(0.009)
1.02 ± 0.20
(0.04 ± 0.008)
2.03 ± 0.20
(0.08 ± 0.008)
LCC3 (MO-041BA)
Underside View
Package Variant Table
Variant
A
B
C
Pad 1
Collector
Collector
Collector
Pad 2
N/C
N/C
Emitter
Pad 3
Emitter
Base
N/C
Pad 4
Base
Emitter
Base
N/C = No Connection
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 8877
Issue 2
Page 4 of 4
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