2N6796
MECHANICAL DATA
Dimensions in mm (inches)
8.64 (0.34)
9.40 (0.37)
8.01 (0.315)
9.01 (0.355)
TMOS FET
ENHANCEMENT
N - CHANNEL
4.06 (0.16)
4.57 (0.18)
12.70
(0.500)
min.
0.89 max.
(0.035)
0.41 (0.016)
0.53 (0.021)
dia.
FEATURES
5.08 (0.200)
typ.
• V
(BR)DSS
= 100V
• I
D
= 8A
Ω
• R
DSON
= 0.18Ω
2
1
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.53 (0.021)
2.54
(0.100)
3
45°
TO–39 PACKAGE (TO-205AF)
Underside View
PIN 1 – Source
PIN 2 – Gate
PIN 3 – Drain
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
Drain–Source Voltage
V
DGR
Drain–Source Voltage (RGS = 1.0 mΩ)
Gate–Source Voltage
V
GS
I
D
Drain Current Continuous T
Case
= 25°C
I
DM
Drain Current Pulsed
P
D
Total Device Dissipation @ T
Case
= 25°C
Derate above 25°C
T
J
, T
STG
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
R
θJC
Thermal Resistance Junction to Case
R
θJA
Thermal Resistance Junction to Ambient
T
L
Maximum Lead Temperature 1.6mm from Case for 10 secs.
V
DS
100V
100V
±20V
8.0A
32A
25W
0.2W/°C
–55 to +150°C
5.0°C/W
175°C/W
300°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 3095
Issue 1
2N6796
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise stated)
Parameter
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
r
DS(on)
V
DS(on)
Test Conditions
V
GS
= 0
V
DS
=V
GS
V
DS
= 0
V
GS
= 0V
V
GS
= 10V
V
GS
= 10V
V
GS
= 15V
V
DS
= 25V
I
D
= 0.25mA
I
D
= 0.5mA
V
GS
= ±20V
Tj = 125
°
C
I
D
= 5.0A
TA = 125
°
C
I
D
= 8.0A
I
D
= 5.0A
V
GS
= 0
Min.
100
2.0
Typ.
Max. Unit
4.0
±100
250
1000
0.18
0.35
1.56
V
nA
µA
Ω
V
s( )
pF
Ω
Drain–Source Breakdown Voltage
Gate Thresshold Voltage
1
Gate–Body Leakage
Zero Gate Voltage Drain Current
Drain–Source On–Resistance
1
Drain–Source On–Voltage
1
Forward Transconductance
1
Input Capacitance
Output capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
1
RiseTime
1
Turn off Delay Time
1
FallTime
1
V
DS
= Rated V
DSS
gfs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
SD
t
on
t
rr
3.0
350
150
50
9.0
900
500
150
30
75
40
45
f = 1.0MH
Z
V
DD
= 30V
I
D
= 5.0A
R
G
= 7.5 ohms
RGEN = 50Ω
ns
SOURCE DRAIN DIODE RATING CHARACTERISTICS
Diode Forward Voltage
1
Forward Turn OnTime
1
Reverse Recovery Time
1
I
S
= Rated ID(on)
V
GS
= 0
5.5
Negligible
V
ns
300
1) Pulse test : Pulse Width < 300µs ,Duty Cycle < 2%
2) Pulse width limited by maximum juction temperature
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 3095
Issue 1
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