2N5910 datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> 2N5910

2N5910: DescriptionRF Small Signal Bipolar Transistor, 0.05A I(C), Silicon, PNP, TO-106, TO-106, 4 PIN; CategoryDiscrete semiconductor The transistor; File Size104KB，1 Pages; ManufacturerCrimson Semiconductor Inc.

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2N5910 Overview

RF Small Signal Bipolar Transistor, 0.05A I(C), Silicon, PNP, TO-106, TO-106, 4 PIN

2N5910 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	TO-106, 4 PIN
Reach Compliance Code	unknown
Maximum collector current (IC)	0.05 A
Collector-emitter maximum voltage	20 V
Configuration	Single
Minimum DC current gain (hFE)	30
JEDEC-95 code	TO-106
JESD-30 code	O-MBCY-W4
JESD-609 code	e0
Number of terminals	4
Maximum operating temperature	135 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.31 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	700 MHz
Base Number Matches	1

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RF LOW-POWER SILICON PNP

Item

Number

Part Number

Manufacturer

V(BR)CEO

hFE

Max

obo

Max

leBO

Max

p•

Max

(V)

(Hz)

(A)

(F)

(A)

(5)

(W)

eCl

140 J

125 J

175 J

Package

Style

V(BR)CEO

NA02EI

NA02FI

NA12EI

NA22EI

NA22FI

NA22XI

NA22YI

NA02EY

NA02FY

NA22EY

NA22YY

8C2058

8C2088

SF213

SF313

8C2528

8C2538

8C2828

NA02FJ

NA12EJ

NA22EJ

NA22FJ

NA22XJ

NA22YJ

8C259C

8C252C

20 V,

(Co nt' d)

200M

180

190

HIU

~~~~x~

~~~~~~

~g~~~g

8C253C

8C262C

BC282C

BC283C

g~~:g

BSY41

2SA1258

2SA1177

BC322

HSE152

2SA500

~~i:45

0463

KT3818

2SB698

BC3228

TP5139

MPS5139

PN5139

2SA838

8F508A

2SB581

2S8581

2SB1000

2S8582

2SA1807

MPSH81

TMPTH81

PN5910

2N5910

BF579

SF103

BF706

HSE350

BSW72

2S8710

2S8821

2S8621

Natl Semi

Nat! Semi

Natl Semi

Nat!

~eml

Natl Semi

See Index

Semi Ltd

See Index

Natl Semi

See Index

NthAmerSemi

iIt10toro-.!a

Micro Elecs

NthAmerSemi

Micro Elecs

Semelab

NthAmerSemi

Micro Elecs

NthAmerSemi

Micro Elecs

Semelab

Semi Inc

NthAmerSemi

Advncd Semi

NthAmerSemi

Semi Inc

Sanyo Elect

See Index

Hybrid Semi

See Index

Advncd Semi

Semi Inc

V/O

Electro

Sanyo Elect

See Index

SprgueElec

otorola

See Index

~ee

moex

Matsushita

Elec Trans

Matsushita

SGS-Ates

Hitachi Ltd

Solid Stlnc

Hitachi Ltd

San~o

Elect

Motorola

SprgueElec

SprrueElec

Nat Semi

FairchiidSC

CentralSemi

See Index

Siemens Akt

p.mperex~lec

800m

1.0

1.5

800m

1.5

1.~

7.0p

0.7p

7.0p

0.7p

().~p

~gg~

200M

190

200

240

260

280

260

280

260

380

450

270

320

230

290

100

270

1.5

100m

200m

100m

800m

1.0

1.5

50m

100m

~gg~

200M

:~g

~gg~

100m

30m

150m

100m

0.7p

4.0p

3.0p

4.0p

7.0p

0.7p

8.0p

4.0p

1.0u

1.QU

1.0u

50n

100n

.05u

1.0u

100n

.05u

.01u

0.1u

30n

1.0u

500n

.01u

1.0u

30n

50n

:,on

100n

1.0u

0.1u

100n

10n

100n

1.0u

100n

10u

100n

.10u

100n

15n

.()~u

800m

750m

800m

600m

750m

200m

500m

300m

600m

800m

750m

800m

300m

TO-92

~g:g~

TO-92

TO-106

TO-92

TO-18

~~g

140 J

150 J

125 J

fg:~~

TO-92

TO·92

~gg~

300m

20n

~~~

125

175

+g:~~

TO·92

TO·18

~~g~

230M

250M

300M

~gg~

300m

150m

350m

800m

250m

g~j

175 J

175J

125 A

140 J

175 J

175

125 J

140 J

150 J

140 J

140 S

fg:~g

TO·18

SOT·89

SPAKvar

TO·92

TO·5

TO·18

2.5p

5.0p

8.0p

13p

2.5p

5.0p

~~g~

2~g~

10m

50m

700m

150m

200m

100m

35n

30n

35n

SOn

~~g~

:m:~g6

TO·106

SPAKvar

TO·92

TO·226

TO·92

250m

150m

500m

350m

~rgUeEleC

35n

50n

4:,n

75n

200n

::Ion

~~~~~~

~gg~

300M

350M

400M

2~g~

30m

25m

700m

1.0

150m

50m

5.0p

20p

38p

2.9p

t)UOf

20n

25n

825m

tl20m

400m

250m

300m

500m

1.0

900m

200m

350m

800m

310m

280m

400m

350m

500m

400m

200m

800m

~~g

125 J

140 J

150 J

150

~~~2

TO·92

SOT·23

TO·92

SOT·23

~'J~¥H81

ggg~

800M

700M

1.8G

250M

200M

~~~~

~~g

140 J

135 S

150 J

~g~faar

TO·226AA

N/A

TO·92

TO· 106

SOT-23

.85p

50m

30m

15n

10n

~~~~~T

~t~~~~V

8C178VI

8C513

BC513

MPS9488

NthAmerSemi

Semi Ltd

Motorola

Hybrid Semi

NthAmerSemi

Matsushita

Advncd Semi

Semi Inc

V/O

Electro

Motorola

See Index

Micro Elecs

Semi Inc

Advncd Semi

Semi Inc

~:~~

~g~

250m

50m

500m

1.5

100m

200m

-1

8.0p

800t

8.0p

6.0p

20p

4.0p

5.0p

18p

~gg~

~~g

140 J

125 J

175

125 J

135 J

135

135 J

~g~~~

TO·18

TO·92

TO·222AB

TO·18

SOT·89

TO·92

~gg~

200M

~gg~

300m

825m

~j~

175

140 S

fg:~~

TO·18

TO·92var

TO·92

1058

2N5910 Related Products

	2N5910	2N5139
Description	RF Small Signal Bipolar Transistor, 0.05A I(C), Silicon, PNP, TO-106, TO-106, 4 PIN	Small Signal Bipolar Transistor, 0.2A I(C), 20V V(BR)CEO, PNP, Silicon, TO-92, TO-92, 3 PIN
Is it Rohs certified?	incompatible	incompatible
package instruction	TO-106, 4 PIN	TO-92, 3 PIN
Reach Compliance Code	unknown	unknown
Maximum collector current (IC)	0.05 A	0.2 A
Collector-emitter maximum voltage	20 V	20 V
Configuration	Single	Single
Minimum DC current gain (hFE)	30	40
JEDEC-95 code	TO-106	TO-92
JESD-30 code	O-MBCY-W4	O-PBCY-W3
JESD-609 code	e0	e0
Number of terminals	4	3
Maximum operating temperature	135 °C	150 °C
Package body material	METAL	PLASTIC/EPOXY
Package shape	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	PNP	PNP
Maximum power dissipation(Abs)	0.31 W	0.62 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	700 MHz	300 MHz
Base Number Matches	1	1

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