2N2907ACSM4R datasheet, PDF - EEWORLD Datasheet

2N2907ACSM4R: DescriptionSmall Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, MO-041BA, HERMETIC SEALED, LCC3-4; CategoryDiscrete semiconductor The transistor; File Size145KB，3 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/

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2N2907ACSM4R Overview

Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, MO-041BA, HERMETIC SEALED, LCC3-4

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	SMALL OUTLINE, R-PDSO-N4
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	0.6 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	50
JEDEC-95 code	MO-041BA
JESD-30 code	R-PDSO-N4
Number of components	1
Number of terminals	4
Maximum operating temperature	200 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
Maximum off time (toff)	300 ns
Maximum opening time (tons)	45 ns
Base Number Matches	1

	2N2907ACSM4R
Description	Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, MO-041BA, HERMETIC SEALED, LCC3-4
Is it Rohs certified?	incompatible
package instruction	SMALL OUTLINE, R-PDSO-N4
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	0.6 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	50
JEDEC-95 code	MO-041BA
JESD-30 code	R-PDSO-N4
Number of components	1
Number of terminals	4
Maximum operating temperature	200 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
Maximum off time (toff)	300 ns
Maximum opening time (tons)	45 ns
Base Number Matches	1

Shortcut: S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY

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