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2SC4153

Description
Power Bipolar Transistor, 7A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size23KB,1 Pages
ManufacturerAllegro
Websitehttp://www.allegromicro.com/
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2SC4153 Overview

Power Bipolar Transistor, 7A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN

2SC4153 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeTO-220F
package instructionTO-220F, 3 PIN
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)7 A
Collector-emitter maximum voltage120 V
ConfigurationSINGLE
Minimum DC current gain (hFE)70
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power consumption environment30 W
Maximum power dissipation(Abs)30 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)30 MHz
VCEsat-Max0.5 V
Base Number Matches1
2SC4153
Silicon NPN Triple Diffused Planar Transistor
( Switchihg Transistor)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC4153
200
120
8
7(
Pulse
14)
3
30(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Humidifier, DC-DC Converter, and General Purpose
(Ta=25°C)
2SC4153
100
max
100
max
120
min
70 to 220
0.5
max
1.2
max
30
typ
110
typ
V
V
13.0min
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=200V
V
EB
=8V
I
C
=50mA
V
CE
=4V, I
C
=3A
I
C
=3A, I
B
=0.3A
I
C
=3A, I
B
=0.3A
V
CE
=12V, I
E
=–0.5A
V
CB
=10V, f=1MHz
External Dimensions
FM20(TO220F)
4.0
±0.2
10.1
±0.2
4.2
±0.2
2.8 c0.5
Unit
µ
A
V
16.9
±0.3
8.4
±0.2
µ
A
MHz
pF
1.35
±0.15
1.35
±0.15
0.85
+0.2
-0.1
0.45
+0.2
-0.1
2.54
2.2
±0.2
2.4
±0.2
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
50
R
L
(Ω)
16.7
I
C
(A)
3
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(A)
0.3
I
B2
(A)
–0.6
t
on
(
µ
s)
0.5
max
t
stg
(
µ
s)
3
max
t
f
(
µ
s)
0.5
max
2.54
3.9
B C E
±0.2
0.8
±0.2
a
b
ø3.3
±0.2
Weight : Approx 2.0g
a. Type No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
C o l l e c t o r - E m i t t er S a tu r a t i o n Vo l ta g e V
C E (sa t)
(V )
7
2
A
00m
V
C E
( sat ) – I
B
Characteristics
(Typical)
3
I
C
– V
B E
Temperature Characteristics
(Typical)
7
( V
C E
=4 V )
5
150
mA
A
00m
6
Co l l e c t o r Cu r r ent I
C
( A)
1
C o l l e c t o r Cu r r e n t I
C
( A)
5
60m
A
5
2
4
40mA
4
p)
Tem
mp)
(Cas
e Te
(Ca
se
3
20 mA
3
1
1
I
C
= 1 A
3A
5A
1
0
0
1
2
3
4
0
0.005 0.01
0.1
Ba se C u r r e nt I
B
( A)
1
2
0
0
–30˚C
I
B
=10mA
25˚C
125
2
2
(Case
˚C
Temp
)
0.5
B a s e - Em i t t o r Vo l t a g e V
B E
( V)
1.0 1.1
Co ll e ct o r- Em i t t er Vo l t ag e V
C E
(V )
(V
C E
=4 V)
300
D C C u r r e n t G ai n h
F E
300
( V
C E
= 4 V)
Transient Thermal Resistance
θ
j -a
( ˚ C / W )
h
FE
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
1 2 5 ˚C
θ
j - a
– t Characteristics
5
Typ
D C C u r r e n t G ai n h
F E
25˚C
100
100
–30
˚C
1
50
50
0.5
20
0.01
0. 1
0 .5
1
5 7
20
0.01
0. 1
0. 5
1
5 7
0.2
1
10
Time t(ms)
1 00
1000
C ol l e ct or C ur ren t I
C
(A )
Co l le c to r C ur r en t I
C
( A)
f
T
– I
E
Characteristics
(Typical)
(V
C E
= 1 2 V )
40
20
10
5
Co lle ct o r C u r r e n t I
C
( A)
Safe Operating Area
(Single Pulse)
10
Pc – Ta Derating
30
0
µ
s
C ut- off F r e q u e n c y f
T
( M H
Z
)
30
Ma x imu m P ow e r D i s s i p a t i o n P
C
( W )
Typ
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
20
10
ms
W
ith
In
fin
20
1
0 .5
Without Heatsink
Natural Cooling
1 5 0 x 1 5 0x 2
10 0 x 1 0 0 x 2
10
50x50x2
ite
he
at
si
nk
10
0 .1
0
–0.01
0.05
–0 . 1
–1
–5
5
10
50
10 0
200
Em it t e r Curr en t I
E
(A)
Co l l ec to r - Em i tt er Vo l ta g e V
C E
( V)
Without Heatsink
2
0
0
25
50
75
10 0
125
150
A m b i e n t T e m p e r a tu r e T a ( ˚ C )
93

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