2C2907AHV datasheet, PDF - EEWORLD Datasheet

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2C2907AHV: DescriptionSi, PNP, RF SMALL SIGNAL TRANSISTOR, 0.022 X 0.022 INCH, 0.011 INCH HEIGHT, DIE-3; CategoryDiscrete semiconductor The transistor; File Size468KB，4 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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2C2907AHV Overview

Si, PNP, RF SMALL SIGNAL TRANSISTOR, 0.022 X 0.022 INCH, 0.011 INCH HEIGHT, DIE-3

2C2907AHV Parametric

Parameter Name	Attribute value
Parts packaging code	DIE
package instruction	UNCASED CHIP, S-XXUC-N3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.6 A
Collector-based maximum capacity	8 pF
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JESD-30 code	S-XXUC-N3
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	UNSPECIFIED
Package shape	SQUARE
Package form	UNCASED CHIP
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.4 W
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	UNSPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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MOTOROW

SEMICONDUCTOR

TECHNICALDATA

Order this

dooument

2C2W7AHVID

2C2907AHV Chip

PNP Silicon

Smal14ignal Transistor

. . designed for dc to VHF amplifier and generaburpose

witching

applications.

.11

“~

[

Technaloglw )muon

Opl

MMIMUM

RATINGS

Rating

symbol

VCEO

VCBO

VEBO

Value

60 ~ {,

‘,:-,$<

!.,..!T,,$

,,>,. ,~ili$\\i

?~i..,:i,

..,>,.

.,,;~~:>- ,

Unit

“:} “‘

Vdo

mAdo

Colleotor-Em.wr Vobge

Oolleotor+aee Vobge

Emitter=ase Vohge

Colleotor Current

6#~~\ “’’’””

$$$~.$.o “~

{’,*$

+~’”$ itio

‘.$,,

“’”

f,~.. 400

“’’’s’:””

,+\:::..?*

.$!,+,,

2.28

PowerDissiWtion@ TA = 25°C

Dsrate above 25°C

TNW,Q

mW/OC

“c

StorageandJuMon Temperature

Range

“$‘

-85 to +200

‘,. , :$,)..,,

,,,,..

.,.., .

ELECTRICAL CHARACTERISTICS ~A = ~sri~jfif~

Chamotedtic

OFF CHARAOTERISTIM

(1C= 10 mAdo)

Collaor+aae

Breakdown

(1C= 10 @*)

,,~’”

Emtier+ese Bre@@wge

(1C= 10 @&)*,$~<,3

Colleotor

C~:*ifit

~CB = %;~)s

‘

~CQ..%@*.

TA = 150”C~

V(BR)CBO

V(BR)EBO

otha~.se tiw.)

Min

Unit

#~~$k#rnb~l

-.,<.:~,t...

.:,.,

~.i

,ti,\\?~:6,

%$/,t,.. .

.,,.

\.t

Physical

Characteristics:

Die Size -

22x 22

rolls

Die Thickness —

>11 roils

Bond Pad Sire.

Emitter— 4.45 sq.

Base — 4.4 sq.

Back Metal

20 ~

Gold

(Nom)

Top Metal

15 ~ Alum. (Nom)

Back Side = Colleotor

Colleotor-EmMer reakdownVol*’~&${}:$

V(BR)CEO

5.0

—

Vdc

ICBO

—

iE~

—

mdo

@do

nA&

(mntinued)

to MO W, D@ Cycle 1.0to

2.0%.

9/93

MO=ROLA

Motorola,Im. 19W

2C2907AHV Related Products

	2C2907AHV
Description	Si, PNP, RF SMALL SIGNAL TRANSISTOR, 0.022 X 0.022 INCH, 0.011 INCH HEIGHT, DIE-3
Parts packaging code	DIE
package instruction	UNCASED CHIP, S-XXUC-N3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.6 A
Collector-based maximum capacity	8 pF
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JESD-30 code	S-XXUC-N3
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	UNSPECIFIED
Package shape	SQUARE
Package form	UNCASED CHIP
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.4 W
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	UNSPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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