MOTOROU
SEMICONDUCTOR TECHNICAL DATA
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by 2C2WHV/D
o
2C2484HV Chip
NPN Silicon
Small-ignal Transistor
..
designed for hig~ain, Iowoiee amptifierapplications.
. hfe = 250 Min @ 1.0 kHz
q
NF=2.OdB
Max@
10kHz
MAXIMUM RATINGS
Rting
Colleotor+mitter Vokge
Coil-or+ase
Voltage
Symbol
VCEO
VCBO
VEBO
Value
60
60
6.0
;~i
PD
Tqg, TJ
‘+$”~
,..~r? $’c’~vh
:,,~~a.
,,,P?~;+,:j$
*,\
Y,+*
,.,
‘)..,
$,,,..
t?,~
,.,
.:;:
,11 ,:‘‘>,,:R’
IllIlk
J L
p
o
‘: ~
Tnehnologlsa
Operstlon
~E~ ‘R’w
,$,
\
:.s
Vdc
mAdo
mW
mW/oC
‘c
EmMer+ase Vobge
Coll*or Current
Power Dissiwtion @ TA = 25°C
Derate above 25°C
Storaga and Junotion Temperature Range
Ic
\!\,\F,;,.!*
~-
.$,
~~~q6’*F’
~, &yf+2Qo
~,,,,,+,,:
:M,>*
F,.,
..,.
‘$:~
noted.)
Max
ELECTRICAL CHARACTERISTICS UA = 25°C
unlqj&@etiSe
o
Charactertattc
OFF CHARAOTERISTIOS
Oolleotor-Emitter Bretiown
(!c = 10 mAdc)
Voltage*
-+*.
~
\$*,.
,,.. ‘$+:%2?(BR)CBO
,*.\,.
,,.
,“
~+k
~,, 1’$
,,
v(BR)EBO
iCEO
ICES
}CBO
.+.’
Unit
‘hysical
characteristics:
Ie
Size —
18x18 roils
Ie Thlcknees —
8x 11
roils
ond Pad Size:
Emitier — 4.7 q.
Base — 4.4 q.
—
—
—
Vti
v&
Vds
nAdc
nAdo
Coll@or+ase Breakdown Vokge
(1C= 1.0 @&)
Emitter4aae Br-down
(iE = 10 ~do)
60
6.0
—
—
VoMgq~?tr
,+$i$xt..,,,,,:<,!
2*.!.,>,
;.+t,
,-~,,,.,.=
Colleotor Cutoff Cuwent.:
‘S$v$
~CE = 5.0 VW) , .::,+$ $
Coll@or CutOfi cm~~
~cE . & V*(:*C
‘JRY
2.0
5.0
ack Metal
20 ~ Gold (Nom)
Dp
Me&l
15 ~ Alum.
(Nom)
ack Stale= Cotlwtor
colleotor*:~*ent
~CB *$ ~~)
~@;y;*’vdCv
TA = 150°c)
~m~.$tioff
Current
QCle
5.0
10
IEBO
1.0 to 2.OYO.
2.0
nAk
~dc
nAdc
(mntinued)
$~~
q
=
5.0 Vdc)
Pulsed. Pulse Width 250 to 350 w, D@
a
Uw
o
91es
@
Motorola,Inc.
19M
M-ROLA
@
ELECTRICAL CHARACTERISTICS -
Charactertattc
ON CHARACTERISTICS
DC Cument Gain
([c = 1.0 fide, VCE = 5.0 Vdo)
(1c -10 @&, VCE = 5.0 Vdo)
(IC =
100 @de, VCE =
5.0 Vdo)
conUnuW CA.
250c
unless othetise
noted.)
s~bol
hFE
Min
Mu
Unit
—
45
(1c.500 ~do, vCE = 5.0 Vdo)
(1c= l.o ~do, vCE -5.0
V*)
(1c= 10 tik, vCE .5.0
Vky
=
(1c.
10 @do, VCE =
5.0 VdO,’TA -65”C)
Colleotor-Emitter Saturation Vobge (1c = 1.0 MAW, IB. 100 ~dc)
Emitter+ase Saturation Vohge (Ic.
SMALL+IGNAL
100 ~do, IB -5.0
V&)
VCE(~at)
200
225
250
250
225
35
—
500
675
800
800
800
,*!.
‘*{,3,
es:<.\.*:<2~,
,,;c:’”>:,t+
‘
,‘:,+.,~+k\..
k.,x““F ‘
~.~
~
..})
,>;yi\*.
..:*
{.+.,,*,*
~~... :.:.\:
.5 $.
Vdc
~.3+~,,J$ ““‘
.,.>+*.* ,,$
.
~~
vBE(Sat)
0.5
,;* .,T&7j ‘v’
\l>.
s::
*::l;**,*
Vdo
CHARACTERISTICS
5.0 Vdo, IE = O,f = 100 kHz -1.0 MHz)
Output Capaoitanoe ~CB.
cob
q~
@e
hre
Input Capacitanw ~BE -0.5 V&, Ic = O,f. 100 kHz -1.0 MHz)
Input Impedanw (lc = 1.0 mA&, VCE = 5.0 Vdo, f = 1.0 kHz)
Vohge Feedba~ Ratio (1c. 1.0 mAdo, VCE = 5.0
V&,
f. 1.0
kHz)
SmalWgnel
Current Gain (Ic.
1.0 Wdo, VCE. 5.0 V*, f = 1.0 kHz)
..rh.>~
‘>. ,:*
— “.71$~,+
~
!. .,, .. ‘.-”
(
,:,, ~p-
.,$-
{’/{ ,:k!**
“,,.-’$$;
.:
‘:250
.,,, ., .’V
—
,.;)’.,*
‘~?+
5.0
““
8.0
24
pF
pF
m
800
900
x
10-4
—
hfe ,, $;: .:;
l~ep~:
,$~
,.,$.
,
.
SmalWignel Current Transfer Ratio, Magnitude
(1c = 50 @do, VCE = 5.0 Vdo, f = 5.0 MHz)
(1c= 500 ~do, vCE -5.0 VW, f = 30 MHz)
A
Output
dm.moe
Noise Figure
(lC=lO@do,
(lC=lO@&,
(Ic = 10 @de,
(Ic = 10 @do,
(Ic = 1.0 MA*, VCE = 5.0 V*, f = 1.0 kHz)
VCE=5.0Vdo, RG=lO~f=100Hz)
VCE=5.0Vd0, RG=lO~f=l.O
Hz) ,,+#
‘F
VCE = 5.0 Vdo, RG = 10 ~ f = 10 Hz) ,$:~‘%*,
VCE -5.0 Vdo, RG = 10 ~ f -10 ~:m,~7 kHz)
tf
‘!
b~~
:jw:,$hm
~il::<$k
+
NF
~~l$.
,,:.
..: .’*4
>, !,*;, ~
t“! ~i.~,,
3.0
2.0
—
—
—
7.0
4.0
7.5
3.0
2.0
3.0
pmhos
dB
—
,., ....
Deltafrom.@&An
MeasuredValues
,,,..,,*
..,,
Deb COIIXXW
,:?,> .\:$.>
.$..*...
:,~t, ‘!8
*,~~,
,
,~l,,,,$t$,,,
\ \,>;~
Current
AIcBO
Mln
—
Mex
*100
or W.O
Wchever is greater
ti5
YO
Initial Value
of
nAdo
% of Initial Value
AhFE
to 350 W, D*
Qde 1.0 to
2.OYO.
—
COMMERCIAL PLUS AND MIUAERO SMALL SIGNAL TRANSISTOR DATA
2C2484HV
I
,..
,.
Literetum Dlettibutlon Cente~
USA MotorolaUtemtureDitibutio~ P.O.Box2091~ Phoenk,ArizonaS502S.
EUROPEMotorolaLtd.;European
LfiereWre
Oentr~W Tanners
Drive,Bl~elends,MiltonKeynes, K145BP,England.
M
Shirregaw@, To~o 141, Japan.
JAPAN
Nip~n Motorola Ltd.; &2-1, Nshl@o_,
ASIAPACIFIC:
MotorolaSemiwndu@ore
H.K.Ltd; Sllbn HerbourOenter, o.2 DaiNng Street,TalPoIndustrial state, aiPo,N.T.,HongKong.
N
E
T
e
@
M~ROLA
.
2C2WHVID
lPH~4101 1-2 PRINTED IN USA WW MPWPOD CPTO YDACAA
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