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2N4393CSM-QR-BG4

Description
Small Signal Field-Effect Transistor, 0.15A I(D), 40V, 1-Element, N-Channel, Silicon, Junction FET, HERMETIC SEALED, CERAMIC, SOT-23 COMPATIBLE, LCC1-3
CategoryDiscrete semiconductor    The transistor   
File Size23KB,2 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

2N4393CSM-QR-BG4 Overview

Small Signal Field-Effect Transistor, 0.15A I(D), 40V, 1-Element, N-Channel, Silicon, Junction FET, HERMETIC SEALED, CERAMIC, SOT-23 COMPATIBLE, LCC1-3

2N4393CSM-QR-BG4 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-CDSO-N3
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Minimum drain-source breakdown voltage40 V
Maximum drain current (ID)0.15 A
Maximum drain-source on-resistance100 Ω
FET technologyJUNCTION
Maximum feedback capacitance (Crss)5 pF
JESD-30 codeR-CDSO-N3
JESD-609 codee4
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Maximum operating temperature175 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceGOLD
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Base Number Matches1
2N4393CSM
MECHANICAL DATA
Dimensions in mm (inches)
SMALL SIGNAL
N–CHANNEL J–FET IN A
HERMETICALLY SEALED
CERAMIC SURFACE MOUNT PACKAGE
FOR HIGH RELIABILITY APPLICATIONS
FEATURES
0.51 ± 0.10
(0.02 ± 0.004)
0.31 rad.
(0.012)
• HERMETIC CERAMIC SURFACE MOUNT
PACKAGE (SOT23 COMPATIBLE)
• CECC SCREENING OPTIONS
• SPACE QUALITY LEVELS OPTIONS
2.54 ± 0.13
(0.10 ± 0.005)
3
2
1
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
A=
0.76 ± 0.15
(0.03 ± 0.006)
0.31 rad.
(0.012)
A
1.40
(0.055)
max.
1.02 ± 0.10
(0.04 ± 0.004)
APPLICATIONS:
SOT23 CERAMIC
(LCC1 PACKAGE)
PAD 1 – Source
Underside View
PAD 2 – Drain
PAD 3 – Gate
Hermetically sealed surface mount version
of the popular 2N4393 for high reliability /
space applications requiring small size
and low weight devices.
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25°C unless otherwise stated)
V
GD
V
GS
I
G
P
D
T
j
T
stg
Gate – Drain Voltage
Gate – Source Voltage
Gate Current
Power Dissipation
Derate
Operating Junction Temperature Range
Storage Temperature Range
–35V
–35V
50mA
350mW
2.8mW / °C
–55 to 175°C
–55 to 175°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 6493
Issue 1

2N4393CSM-QR-BG4 Related Products

2N4393CSM-QR-BG4 2N4393CSMG4 2N4393CSM 2N4393CSM-QR-B
Description Small Signal Field-Effect Transistor, 0.15A I(D), 40V, 1-Element, N-Channel, Silicon, Junction FET, HERMETIC SEALED, CERAMIC, SOT-23 COMPATIBLE, LCC1-3 Small Signal Field-Effect Transistor, 0.15A I(D), 40V, 1-Element, N-Channel, Silicon, Junction FET, HERMETIC SEALED, CERAMIC, SOT-23 COMPATIBLE, LCC1-3 Small Signal Field-Effect Transistor, 0.15A I(D), 40V, 1-Element, N-Channel, Silicon, Junction FET, HERMETIC SEALED, CERAMIC, SOT-23 COMPATIBLE, LCC1-3 Small Signal Field-Effect Transistor, 0.15A I(D), 40V, 1-Element, N-Channel, Silicon, Junction FET, HERMETIC SEALED, CERAMIC, SOT-23 COMPATIBLE, LCC1-3
Is it Rohs certified? conform to conform to incompatible incompatible
package instruction SMALL OUTLINE, R-CDSO-N3 SMALL OUTLINE, R-CDSO-N3 SMALL OUTLINE, R-CDSO-N3 SMALL OUTLINE, R-CDSO-N3
Reach Compliance Code compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum drain-source breakdown voltage 40 V 40 V 40 V 40 V
Maximum drain current (ID) 0.15 A 0.15 A 0.15 A 0.15 A
Maximum drain-source on-resistance 100 Ω 100 Ω 100 Ω 100 Ω
FET technology JUNCTION JUNCTION JUNCTION JUNCTION
Maximum feedback capacitance (Crss) 5 pF 5 pF 5 pF 5 pF
JESD-30 code R-CDSO-N3 R-CDSO-N3 R-CDSO-N3 R-CDSO-N3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Operating mode DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD
Terminal location DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON SILICON SILICON
Base Number Matches 1 1 1 1

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