DATA SHEET
DATA SHEET
SILICON TRANSISTOR
2SC3583
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC3583 is an NPN epitaxial silicon transistor designed for use in
low-noise and small signal amplifiers from VHF band to UHF band. Low-
noise figure, high gain, and high current capability achieve a very wide
dynamic range and excellent linearity. This is achieved by direct nitride
passivated base surface process (DNP process) which is an NEC
proprietary new fabrication technique.
PACKAGE DIMENSIONS
(Units: mm)
2.8±0.2
0.4
−0.05
+0.1
1.5
0.65
−0.15
+0.1
0.95
0.95
FEATURES
• NF
• Ga
1.2 dB TYP.
13 dB TYP.
@f = 1.0 GHz
@f = 1.0 GHz
2.9±0.2
2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
20
10
1.5
65
200
150
65 to +150
V
V
V
mA
mW
C
C
0.3
Marking
1.1 to 1.4
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
CHARACTERISTIC
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Feed-Back Capacitance
Insertion Power Gain
Maximum Available Gain
Noise Figure
SYMBOL
I
CBO
I
EBO
h
FE
*
f
T
C
re
**
50
100
9
0.35
11
13
15
1.2
2.5
0.9
MIN.
TYP.
MAX.
1.0
1.0
250
GHz
pF
dB
dB
dB
UNIT
TEST CONDITIONS
V
CB
= 10 V, I
E
= 0
V
EB
= 1 V, I
E
= 0
V
CE
= 8 V, I
C
= 20 mA
V
CE
= 8 V, I
C
= 20 mA
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
V
CE
= 8 V, I
C
= 20 mA, f = 1.0 GHz
V
CE
= 8 V, I
C
= 20 mA, f = 1.0 GHz
V
CE
= 8 V, I
E
= 7 mA, f = 1.0 GHz
A
A
S
21e
2
MAG
NF
* Pulse Measurement PW
350
s, Duty Cycle
2 %
** The emitter terminal and the case shall be connected to the gurad terminal of the three-terminal capacitance bridge.
h
FE
Classification
Class
Marking
h
FE
R33/Q *
R33
50 to 100
R34/R *
R34
80 to 160
R35/S *
R35
125 to 250
* Old Specification / New Specification
Document No. P10360EJ4V1DS00 (4th edition)
Date Published March 1997 N
Printed in Japan
0 to 0.1
©
0.16
−0.06
+0.1
0.4
−0.05
+0.1
1
3
1984
2SC3583
TYPICAL CHARACTERISTICS (T
A
= 25
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
3
P
T
-Total Power Dissipation-W
Free air
C
re
-Feed-back Capacitance-pF
200
f = 1.0 MHz
2
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
1
0.7
0.5
0.3
0.2
100
0
50
100
150
0.1
1
T
A
-Ambient Temperature-°C
2
3
5
7
10
V
CB
-Collector to Base Voltage-V
INSERTION GAIN vs.
COLLECTOR CURRENT
20
30
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
V
CE
= 8 V
15
|S
21e
|
2
-Insertion Gain-dB
100
h
FE
-DC Current Gain
10
50
5
20
V
CE
= 8 V
f = 1.0 GHz
10
0.5
1
5
10
50
0
0.5
1
5
10
50 70
I
C
-Collector Current-mA
GAIN BANDWIDTH PRODUUT vs.
COLLECTOR CURRENT
30
V
CE
= 8 V
f
T
-Gain Bandwidth Product-MHz
20
MAG-Maximum Available Gain-dB
|S
21e
|
2
-Insertion Gain -dB
16
20
I
C
-Collector Current-mA
INSERTION GAIN, MAXIMUM AVAILABLE
GAIN vs. FREQUENCY
V
CE
= 8 V
I
C
= 20 mA
MAG
|S
21e
|
2
12
10
7
5
3
2
8
4
1
1
2
3
5
7
10
I
C
-Collector Current-mA
20
30
0
0.1
0.2
0.3
0.5 0.7. 1.0
f-Frequency-GHz
2.0 3.0
2
Power technology
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