HB56UW1673E-5F datasheet, PDF - EEWORLD Datasheet

HB56UW1673E-5F: Description128MB Buffered EDO DRAM DIMM 16-Mword 】 72-bit, 4k Refresh, 1 Bank Module (18 pcs of 16M 】 4 components); Categorystorage storage; File Size219KB，27 Pages; ManufacturerELPIDA; Websitehttp://www.elpida.com/en

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HB56UW1673E-5F Overview

128MB Buffered EDO DRAM DIMM 16-Mword 】 72-bit, 4k Refresh, 1 Bank Module (18 pcs of 16M 】 4 components)

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	ELPIDA
Parts packaging code	DIMM
package instruction	DIMM, DIMM168
Contacts	168
Reach Compliance Code	unknow
ECCN code	EAR99
access mode	FAST PAGE WITH EDO
Maximum access time	50 ns
Other features	RAS ONLY/CAS BEFORE RAS REFRESH
I/O type	COMMON
JESD-30 code	R-XDMA-N168
memory density	1207959552 bi
Memory IC Type	EDO DRAM MODULE
memory width	72
Humidity sensitivity level	1
Number of functions	1
Number of ports	1
Number of terminals	168
word count	16777216 words
character code	16000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	16MX72
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM168
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	225
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	4096
Maximum seat height	31.75 mm
Maximum standby current	0.019 A
Maximum slew rate	2.35 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

	HB56UW1673E-5F	HB56UW1673E-F
Description	128MB Buffered EDO DRAM DIMM 16-Mword 】 72-bit, 4k Refresh, 1 Bank Module (18 pcs of 16M 】 4 components)	128MB Buffered EDO DRAM DIMM 16-Mword 】 72-bit, 4k Refresh, 1 Bank Module (18 pcs of 16M 】 4 components)

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