2N6590.MODR1 datasheet, PDF - EEWORLD Datasheet

2N6590.MODR1: DescriptionPower Bipolar Transistor, 10A I(C), 450V V(BR)CEO, 1-Element, PNP, Silicon, TO-61, Metal, 3 Pin, TO-61, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size56KB，1 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/; Environmental Compliance

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2N6590.MODR1 Overview

Power Bipolar Transistor, 10A I(C), 450V V(BR)CEO, 1-Element, PNP, Silicon, TO-61, Metal, 3 Pin, TO-61, 3 PIN

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	POST/STUD MOUNT, O-MUPM-D3
Reach Compliance Code	compliant
Maximum collector current (IC)	10 A
Collector-emitter maximum voltage	450 V
Configuration	SINGLE
Minimum DC current gain (hFE)	7
JEDEC-95 code	TO-61
JESD-30 code	O-MUPM-D3
JESD-609 code	e1
Number of components	1
Number of terminals	3
Package body material	METAL
Package shape	ROUND
Package form	POST/STUD MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN SILVER COPPER
Terminal form	SOLDER LUG
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	25 MHz
Base Number Matches	1

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