2N2915 datasheet, PDF - EEWORLD Datasheet

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2N2915: Description30mA, 45V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5, TO-5, 6 PIN; CategoryDiscrete semiconductor The transistor; File Size512KB，2 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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2N2915 Overview

30mA, 45V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5, TO-5, 6 PIN

2N2915 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Parts packaging code	TO-5
package instruction	CYLINDRICAL, O-MBCY-W6
Contacts	6
Reach Compliance Code	unknown
Maximum collector current (IC)	0.03 A
Collector-emitter maximum voltage	45 V
Configuration	SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)	150
JEDEC-95 code	TO-5
JESD-30 code	O-MBCY-W6
JESD-609 code	e0
Number of components	2
Number of terminals	6
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.3 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	60 MHz
Base Number Matches	1

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DUAL

NPN

SILICON

ANNULAR*TRANSISTORS

@

e

low-noise

@

e

. . .

especially designed

differential

amplifier

for low-level,

applications.

s High Breakdown Voltage

BVCEO= 70 Vdc typical

o Very High Beta Guaranteed

s Beta Match as tight as 0.9 to 1

,.$:>.

,.,p~ ..*.

6-LEAD

TO-18

6-LEAD TO-5

2;:;

2N2920

;3

2;::;2

o

as low

as

3.0 db max at f = 1 kc

2N2979

,.,&i

\

\~

.t7<,\\

\

ABSOLUTE

MMIMUM

RATINGS

(TAeq~~{f@\eSS

otherwise noted)

.. ,. ,...

J,+

,

‘

Rating

‘~z~~%$

.x>

$,j\,

~ ‘*,,,,<, \,

Characteristics

Collector-Base

Voltage

~&291 3-]8

2N2972-77

45

2N2919-20

2N2978-79

60

Unit

Vdc

mAdc

oo

04

05

3

‘5

:+

%

6

+0

%

10

6

20

%

10

%20

Pin Connections,

Electrically

Bottom View

From

All Leads

Isolated

Case

Collector-Emitter

Emitter-Base

Voltage

.+.

VEBO

lC

45

6

30

60

w’:)

.>

“t:~p$,~~

--- ~,~:r..

DC Collector Curre~.. ‘$,

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1

>&.,

.,i$,,

~f’i..

Jmction Temp~fa@)e/,*

Voltige

\..,,., !...,

,,,,,..,~:,\

,(

‘J

T

Stg

+200

-65 to +200

ONE SIDE

BOTH SIDES

‘c

“c

Storage Te#per~&Te

\

,J,

,...

?V

8

,...~ ‘!$.‘“<*?-’

.&::-..

.

‘*Ji\,.~..l:~$

.

~nge

s,.<}.

To/$f~yYce

Dissipation @ TA= 25° C

>\,,

...

TO?$ Case

Derate above 25° C

TO-18 Case

Derate above 25° C

Total Device Dissipation @ Tc= 250 C

TO-5 Case

Derate above 25° C

TO-18 Case

Derate above 25° C

mPatents

pending

PD

300

1.7

250

1.43

PD

750

4.3

500

2.85

600

3.4

mW

mW/O C

mW

mW/O C

300

1.72

1500

8.6

750

4.3

mW

mW/O C

mW

mW~ C

TO-18 TYPE

2N2972-79

TO-5 TYPE

2N2913-20

A

SUBSIDIARY

OF

MOTOROLA

INC.

@

2N2915 Related Products

	2N2915	2N2913	2N2916
Description	30mA, 45V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5, TO-5, 6 PIN	Small Signal Bipolar Transistor, 0.03A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon, TO-5, TO-5, 6 PIN	Transistor
Is it Rohs certified?	incompatible	incompatible	incompatible
package instruction	CYLINDRICAL, O-MBCY-W6	CYLINDRICAL, O-MBCY-W6	,
Reach Compliance Code	unknown	unknown	unknown
Maximum collector current (IC)	0.03 A	0.03 A	0.03 A
Minimum DC current gain (hFE)	150	150	150
JESD-609 code	e0	e0	e0
Polarity/channel type	NPN	NPN	NPN
surface mount	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Nominal transition frequency (fT)	60 MHz	60 MHz	60 MHz
Base Number Matches	1	1	1
Collector-emitter maximum voltage	45 V	45 V	-
Configuration	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS	-
JEDEC-95 code	TO-5	TO-5	-
JESD-30 code	O-MBCY-W6	O-MBCY-W6	-
Number of components	2	2	-
Number of terminals	6	6	-
Maximum operating temperature	200 °C	-	175 °C
Package body material	METAL	METAL	-
Package shape	ROUND	ROUND	-
Package form	CYLINDRICAL	CYLINDRICAL	-
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	-
Maximum power dissipation(Abs)	0.3 W	-	0.3 W
Certification status	Not Qualified	Not Qualified	-
Terminal form	WIRE	WIRE	-
Terminal location	BOTTOM	BOTTOM	-
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	-
Transistor component materials	SILICON	SILICON	-
Maker	-	Motorola ( NXP )	Motorola ( NXP )

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