2N6789LCC4-JQR-B datasheet, PDF

2N6789LCC4-JQR-B: DescriptionPower Field-Effect Transistor, 3.5A I(D), 150V, 0.8ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC4-15; CategoryDiscrete semiconductor The transistor; File Size55KB，1 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/

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2N6789LCC4-JQR-B Overview

Power Field-Effect Transistor, 3.5A I(D), 150V, 0.8ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC4-15

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	CHIP CARRIER, R-CQCC-N15
Reach Compliance Code	compliant
ECCN code	EAR99
Minimum drain-source breakdown voltage	150 V
Maximum drain current (ID)	3.5 A
Maximum drain-source on-resistance	0.8 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-CQCC-N15
Number of terminals	15
Operating mode	ENHANCEMENT MODE
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Base Number Matches	1

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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