3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Parts packaging code | BCY |
| package instruction | CYLINDRICAL, O-MBCY-W3 |
| Contacts | 2 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Other features | FAST SWITCHING |
| Shell connection | DRAIN |
| Configuration | SINGLE |
| Minimum drain-source breakdown voltage | 100 V |
| Maximum drain current (ID) | 3.5 A |
| Maximum drain-source on-resistance | 0.6 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-205AF |
| JESD-30 code | O-MBCY-W3 |
| JESD-609 code | e1 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 14 A |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | TIN SILVER COPPER |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
| 2N6782R1 | 2N6782.MODR1 | 2N6782.MOD | |
|---|---|---|---|
| Description | 3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | 3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | 3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN |
| Is it lead-free? | Lead free | Lead free | Contains lead |
| Is it Rohs certified? | conform to | conform to | incompatible |
| Parts packaging code | BCY | BCY | BCY |
| package instruction | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 |
| Contacts | 2 | 2 | 2 |
| Reach Compliance Code | compliant | compliant | compliant |
| ECCN code | EAR99 | EAR99 | EAR99 |
| Other features | FAST SWITCHING | FAST SWITCHING | FAST SWITCHING |
| Shell connection | DRAIN | DRAIN | DRAIN |
| Configuration | SINGLE | SINGLE | SINGLE |
| Minimum drain-source breakdown voltage | 100 V | 100 V | 100 V |
| Maximum drain current (ID) | 3.5 A | 3.5 A | 3.5 A |
| Maximum drain-source on-resistance | 0.6 Ω | 0.6 Ω | 0.6 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-205AF | TO-205AF | TO-205AF |
| JESD-30 code | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 |
| Number of components | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package body material | METAL | METAL | METAL |
| Package shape | ROUND | ROUND | ROUND |
| Package form | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 14 A | 14 A | 14 A |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO |
| Terminal form | WIRE | WIRE | WIRE |
| Terminal location | BOTTOM | BOTTOM | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON |
| Base Number Matches | 1 | 1 | 1 |
| JESD-609 code | e1 | e1 | - |
| Terminal surface | TIN SILVER COPPER | TIN SILVER COPPER | - |
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