Standard SRAM, 2KX8, 120ns, CMOS, CDIP24,
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Reach Compliance Code | unknown |
| Maximum access time | 120 ns |
| I/O type | COMMON |
| JESD-30 code | R-XDIP-T24 |
| JESD-609 code | e0 |
| memory density | 16384 bit |
| Memory IC Type | STANDARD SRAM |
| memory width | 8 |
| Number of terminals | 24 |
| word count | 2048 words |
| character code | 2000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| organize | 2KX8 |
| Output characteristics | 3-STATE |
| Package body material | CERAMIC |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP24,.6 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Parallel/Serial | PARALLEL |
| power supply | 5 V |
| Certification status | Not Qualified |
| Filter level | MIL-STD-883 Class B (Modified) |
| Maximum standby current | 0.003 A |
| Minimum standby current | 4.5 V |
| Maximum slew rate | 0.085 mA |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | MILITARY |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| Base Number Matches | 1 |
| HM1-6116-8 | HM4-6116-8 | HM4-6116L-8 | |
|---|---|---|---|
| Description | Standard SRAM, 2KX8, 120ns, CMOS, CDIP24, | Standard SRAM, 2KX8, 120ns, CMOS, CQCC32, | Standard SRAM, 2KX8, 120ns, CMOS, CQCC32, |
| Is it Rohs certified? | incompatible | incompatible | incompatible |
| Reach Compliance Code | unknown | unknown | unknown |
| Maximum access time | 120 ns | 120 ns | 120 ns |
| I/O type | COMMON | COMMON | COMMON |
| JESD-30 code | R-XDIP-T24 | R-XQCC-N32 | R-XQCC-N32 |
| JESD-609 code | e0 | e0 | e0 |
| memory density | 16384 bit | 16384 bit | 16384 bit |
| Memory IC Type | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
| memory width | 8 | 8 | 8 |
| Number of terminals | 24 | 32 | 32 |
| word count | 2048 words | 2048 words | 2048 words |
| character code | 2000 | 2000 | 2000 |
| Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C | 125 °C | 125 °C |
| Minimum operating temperature | -55 °C | -55 °C | -55 °C |
| organize | 2KX8 | 2KX8 | 2KX8 |
| Output characteristics | 3-STATE | 3-STATE | 3-STATE |
| Package body material | CERAMIC | CERAMIC | CERAMIC |
| encapsulated code | DIP | QCCN | QCCN |
| Encapsulate equivalent code | DIP24,.6 | LCC32,.45X.55 | LCC32,.45X.55 |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | CHIP CARRIER | CHIP CARRIER |
| Parallel/Serial | PARALLEL | PARALLEL | PARALLEL |
| power supply | 5 V | 5 V | 5 V |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| Filter level | MIL-STD-883 Class B (Modified) | MIL-STD-883 Class B (Modified) | MIL-STD-883 Class B (Modified) |
| Maximum standby current | 0.003 A | 0.003 A | 0.0006 A |
| Minimum standby current | 4.5 V | 4.5 V | 2 V |
| Maximum slew rate | 0.085 mA | 0.085 mA | 0.085 mA |
| Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V |
| surface mount | NO | YES | YES |
| technology | CMOS | CMOS | CMOS |
| Temperature level | MILITARY | MILITARY | MILITARY |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE | NO LEAD | NO LEAD |
| Terminal pitch | 2.54 mm | 1.27 mm | 1.27 mm |
| Terminal location | DUAL | QUAD | QUAD |
| Maker | - | TEMIC | TEMIC |
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