This version of the ICD is the version generated after qualifi-
cation campaign closure.
This specification details the ratings, physical, geometrical,
electrical and electro-optical characteristics, test- and
inspection-data for the High Accuracy Star Tracker (HAS)
Version 2 CMOS Active Pixel image Sensor (CMOS APS).
The device described in this document is protected by US patent
6,225,670 and others.
1.7 Handling Precautions
The component is susceptible to damage by electro-static
discharge. Therefore, suitable precautions shall be employed for
protection during all phases of manufacture, testing, packaging,
shipment and any handling. The following guidelines are appli-
cable:
■
■
Always manipulate the devices in an ESD controlled
environment.
Always store the devices in a shielded environment that
protects against ESD damage (at least a non-ESD generating
tray and a metal bag).
Always wear a wrist strap when handling the devices and use
ESD safe gloves.
The HAS2 is classified as class 1A (JEDEC classification -
[AD03]) device for ESD sensitivity.
1.2 Component Type Variants
A summary of the type variants of the basic CMOS image sensor
is given in
Table 1
on page 8. The complete list of detailed speci-
fications for each type variant is given in
Table 3
on page 9 for
each type separately.
All specifications in
Table 3
on page 9 are given at 25 ± 3°C,
under nominal clocking and bias conditions. Exceptions are
noted in the 'remarks' field.
■
■
1.8 Storage Information
The components must be stored in a dust-free and temperature-,
humidity and ESD controlled environment.
■
■
■
■
1.3 Maximum Rating
The maximum ratings which shall not be exceeded at any time
during use or storage are as scheduled in
Table 2
on page 9.
Devices must always be stored in special ESD-safe trays such
that the glass window is never touched.
The trays are closed with EDS-safe rubber bands.
The trays are sealed in an ESD-safe conductive foil in clean
room conditions.
For transport and storage outside a clean room the trays are
packed in a second ESD-save bag that is sealed in clean room.
1.4 Physical Dimensions and Geometrical Information
The physical dimensions of the assembled component are
shown in
Figure 2
on page 25. The geometrical information in
Figure 4
on page 26 describes the position of the die in the
package.
1.9 Procurement Requirements
The HAS2 image sensor can be procured at Cypress Semicon-
ductor or its distributors, using the following references:
■
■
1.5 Pin Assignment
Figure 6
on page 27 contains the pin assignment. The figure
contains a schematic drawing and a pin list. A detailed functional
description of each pin can be found in
“Pin List”
on page 39.
Flight sensors: CYIH1SM1000AA-HHCS.
Engineering sensors: CYIH1SM1000AA-HHCES.
1.6 Soldering Instructions
Soldering is restricted to manual soldering only. No wave or
reflow soldering is allowed. For the manual soldering, following
restrictions are applicable:
■
■
■
The HAS sensor is subject to the standard European export
regulations for dual use products.
A Certificate of Conformance will be issued upon request at no
additional charge. The CoC will refer to this Detailed Specifi-
cation.
Additional screening tests can be done upon request at
additional cost.
The following data is by default delivered with FM sensors:
■
■
■
■
■
Solder 1 pin on each of the 4 sides of the sensor.
Cool down period of min. 1 minute before soldering another pin
on each of the 4 sides.
Repeat soldering of 1 pin on each side, including a 1 minute
cool down period.
Sensor calibration data
Temperature calibration data
Certificate of Conformance to this detailed specification
Visual inspection report
Bad pixel map
Cypress Semiconductor Corporation
Document Number: 001-54123 Rev. *A
•
198 Champion Court
•
San Jose
,
CA 95134-1709
•
408-943-2600
Revised September 18, 2009
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CYIH1SM1000AA-HHCS
2. Ordering Information
Marketing Part Number
CYIH1SM1000AA-HHCS
CYIH1SM1000AA-HHCES
Description
Space qualified (mono version)
Standard Market (mono version)
Package
84 pin JLCC
84 pin JLCC
Production
In production
Nov-09
3. Applicable Documents
The following documents form part of this specification and shall be read in conjunction with it:
Nr.
AD01
AD02
AD03
AD04
AD05
AD06
Reference
ESCC Generic Specification
9020
Cypress 001-06225
[1]
JESD22-A114-B
APS2-FVD-06-003
Cypress 001-49283
Cypress 001-49280
Title
Charge Coupled Devices, Silicon, Photosensitive
Electro-optical test methods for CMOS image
sensors
Electrostatic Discharge (ESD) Sensitivity Testing
Human Body Model (HBM)
Process Identification Document for HAS2
Visual Inspection for FM devices
HAS2 FM Screening
Issue
2 Draft F
E
B
2
1
2
October, 2008
June, 2000
February, 2008
January, 2008
June, 2009
Date
4. Acronyms Used
For the purpose of this specification, the terms, definitions, abbreviations, symbols, and units specified in ESCC basic Specification
21300 shall apply. In addition, the following table contains terms that are specific to CMOS image sensors and are not listed in
ESCC21300
Abbreviation
ADC
APS
CDS
DNL
DR
DSNU
EPPL
ESD
FPN
HAS
INL
MTF
NDR
PRNU
TBC
TBD
RGA
Description
Analog to Digital Convertor
Active Pixel Sensor
Correlated Double Sampling
Differential Non Linearity
Destructive Readout
Dark Signal Non Uniformity
European Preferred Parts List
Electro-Static Discharge
Fixed Pattern Noise
High Accuracy Startracker
Integral Non Linearity
Modulated Transfer Function
Non Destructive Readout
Pixel Response Non Uniformity
To be Confirmed
To be Defined
Residual Gas Analysis
Note
1. This specification will be superseded by the ESCC basic specification 25000 which is currently under development. The current reference is an internal Cypress
procedure which is a confidential document.
Document Number: 001-54123 Rev. *A
Page 2 of 71
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CYIH1SM1000AA-HHCS
The following formulas are applicable to convert % Vsat and mV/s
into e- and e-/s:
tions and the tolerances as indicated in
Figure 2
on page 25 and
Figure 3
on page 26.
5.2.3 Weight
The maximum weight of the components specified herein shall
be as specified in
Table 3
on page 9 - Mechanical Specifications,
item 2.
FPN
[
e
−
]
=
FPN
[%
Vsat
] *
Vsat
conversion
_
gain
Dark
_
signal
[
e
−
/
s
]
=
DSNU
[
e
−
]
=
Other definitions:
Dark
_
signal
[
V
/
s
]
conversion
_
gain
5.3 Materials and Finishes
The materials and finishes shall be as specified herein. Where
a definite material is not specified, a material which will enable
the components specified herein to meet the performance
requirements of this specification shall be used.
5.3.1 Case
The case shall be hermetically sealed and have a ceramic body
and a glass window.
Type
Material
Thermal expansion coefficient
Hermeticity
Thermal resistance
(Junction to case)
5.3.2 Lead material and finish
Lead material
1e Finish
2
nd
Finish
5.3.3 Window
The window material is a BK7G18 glass lid with anti-reflective
coating applied on both sides.
The optical quality of the glass shall have the following specifi-
cation:
See
Table 3
on page 9 - glass window specification
The anti reflective coating shall have a reflection coefficient <
1.3% absolute and < 0.8% on average, over a bandwidth from
440 nm to 1100 nm.
KOVAR
Nickel, min 2
μ
m
Gold, min 1.5
μ
m
JLCC-84
Black Alumina
BA-914
7.6 x 10
-6 /K
< 5·10-7 atms.
cm3/s
3.633
°C/W
DSNU
[%
Vsat
] *
Vsat
conversion
_
gain
Ana
log
Range
ADC
Re
solution
Conversion Gain
ADC Quantization Noise
=
ADC
Re
solution
■
■
■
Conversion gain for HAS: 14.8 µV/e-
Definition for Local measurements: 32 x 32 pixels
Definition for Global measurements: Full pixel array
5. Detailed Information
5.1 Deviations from Generic Specification
Lot acceptance and screening are based on ESCC 9020 issue 2
draft F.
section 5.9
on page 5 of this specification describes the
lot acceptance and screening.
5.2 Mechanical Requirements
5.2.1 Dimension Check
The dimensions of the components specified herein shall be
checked. They shall comply with the specifications and the toler-
ances as indicated in
Figure 2
on page 25.
5.2.2 Geometrical Characteristics
The geometrical characteristics of the components specified
herein shall be checked. They shall comply with the specifica-
Document Number: 001-54123 Rev. *A
Page 3 of 71
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CYIH1SM1000AA-HHCS
5.4 Marking
5.4.1 General
The marking Shall consist of a lead identification and traceability information.
5.4.2 Lead Identification
An index to pin 1 shall be located on the top of the package in the position defined in
Figure 2
on page 25. The pin numbering is
counter clock-wise, when looking at the top-side of the component.
5.4.3 Traceability Information
Each component shall be marked such that complete traceability can be maintained.
The component shall bear a number that is constituted as follows:
Indication of type. To be replaced
by detail specification number
when this is allocated.
HAS2 - FM
Type variant
Serial number
Production date (YYMMDD)
000001
061006
5.5 Electrical and Electro-optical Measurements
5.5.1 Electrical and Electro-optical Measurements at Reference
Temperature
The parameters to be measured to verify the electrical and
electro-optical specifications are scheduled in
Table 4
on page
14 and
Table 13
on page 24. Unless otherwise specified, the
measurements shall be performed at a environmental temper-
ature of 22±3°C.
For all measurements the nominal power supply, bias and
clocking conditions apply. The nominal power supply and bias
conditions are given in
Table 14
on page 24, the timing diagrams
in
Figure 35
on page 51 and
Figure 37
on page 53.
Remark: The given bias and power supply settings imply that the
devices are measured in "soft- reset" condition.
5.5.2 Electrical and Electro-optical measurements at High and
Low Temperature
The parameters to be measured to verify the electrical and
electro-optical specifications are scheduled in
Table 5
on page
15 and
Table 6
on page 16. Unless otherwise specified, the
measurements shall be performed at
-40 (-5 +0) °C and at +85 (+5 -0) °C.
5.5.3 Circuits for Electrical and Electro-optical Measurements
Circuits for performing the electro-optical tests in
Table 4
on page
14 and
Table 13
on page 24 are shown in
Figure 48
on page 63
to
Figure 51
on page 63.
5.6 Burn-in Test
5.6.1 Parameter Drift Values
The parameter drift values for power burn-in are specified in
Table 7
on page 18 of this specification. Unless otherwise
specified the measurements shall be conducted at a environ-
mental temperature of 22±3°C and under nominal power supply,
bias and timing conditions.
The parameter drift values shall not be exceeded. In addition to
these drift value requirements, also the limit values of any
parameter - as indicated in
Table 4
on page 14 - shall not be
exceeded.
Conditions for high temperature reverse bias burn-in
Not Applicable
5.6.2 Conditions for Power Burn-in
The conditions for power burn-in shall be as specified in
Table
10
on page 21 of this specification
5.6.3 Electrical Circuits for High Temperature Reverse Bias
Burn-in
Not Applicable
5.6.4 Electrical Circuits for Power Burn-in
Circuits to perform the power burn-in test are shown in
Figure 48
on page 63 and next ones of this specification.
Document Number: 001-54123 Rev. *A
Page 4 of 71
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CYIH1SM1000AA-HHCS
5.7 Environmental and Endurance Tests
5.7.1 Electrical and Electro-optical Measurements on
Completion of Environmental Test
The parameters to be measured on completion of environmental
tests are scheduled in
Table 11
on page 21. Unless otherwise
stated, the measurements shall be performed at a environmental
temperature of 22±3°C. Measurements of dark current must be
performed at 22±1°C and the actual environmental temperature
must be reported with the test results.
5.7.2 Electrical and Electro-optical Measurements At
Intermediate Point During Endurance Test
The parameters to be measured at intermediate points during
endurance test of environmental tests are scheduled in
Table 11
on page 21. Unless otherwise stated, the measurements shall
be performed at an environmental temperature of 22±3°C
5.7.3 Electrical and electro-optical measurements on Completion
of Endurance Test
The parameters to be measured on completion of endurance
tests are scheduled in
Table 11
on page 21. Unless otherwise
stated, the measurements shall be performed at a environmental
temperature of 22±3°C
5.7.4 Conditions for Operating Life Test
The conditions for operating life tests shall be as specified in
Table 10
on page 21 of this specification.
5.7.5 Electrical Circuits for Operating Life Test
Circuits for performing the operating life test are shown in
Figure
48
on page 63 and next ones of this specification.
5.7.6 Conditions for High Temperature Storage Test
The temperature to be applied shall be the maximum storage
temperature specified in
Table 2
on page 9 of this specification.
Test
Wafer processing data review
SEM
Total dose test
Endurance test
Test method
PID
ESCC 21400
ESCC 22900
MIL-STD-883
Method 1005
5.8 Total Dose Radiation Test
5.8.1 Application
The total dose radiation test shall be performed in accordance
with the requirements of ESCC Basic specification 22900.
5.8.2 Parameter Drift Values
The allowable parameter drift values after total dose irradiation
are listed in
Table 8
on page 19. The parameters shown are valid
after a total dose of 42KRad and 168h/100°C annealing.
5.8.3 Bias conditions
Continuous bias shall be applied during irradiation testing as
shown in
Figure 48
on page 63 and next ones of this specifi-
cation.
5.8.4 Electrical and Electro-optical Measurements
The parameters to be measured, prior to, during and on
completion of the irradiation are listed in
Table 13
on page 24 of
this specification. Only devices that meet the specification in
Table 4
on page 14 of this specification shall be included in the
test samples.
5.9 Lot Acceptance and Screening
This paragraph describes the Lot Acceptance Testing (LAT) and
screening on the HAS FM devices. All tests on device level have
to be performed on screened devices (see
Table 5.9.6
on page
7).
5.9.1 Wafer Lot Acceptance
This is the acceptance of the silicon wafer lot. This has to be
done on every wafer lot that will be used for the assembly of flight
models.
Number of devices
NA
4 naked dies
3 devices
6 devices
Test condition
NA
NA
42 krad : 1krad/h
2000h at +125 C
Test location
CY
Test house
ESTEC by CY
Test House
Before and after total dose test and endurance test:
■
5.9.2 Glass Lot Acceptance
Transmission and reflectance curves that are delievered with
each lot shall be compared with the specifications in
Table ,
“Glass Lid Specification,”
on page 10
3 glass lid shall be chosen randomly from the lot and will be
measured in detail. All obtained results will be compared with
Figure 5
on page 27.
Electrical measurements before and after at high, low and room
temperature. Conform
Table 4
on page 14 and
Table 5
on page
15,Table
6
on page 16 of this specification.
Visual inspection before and after
Detailed electro optical measurements before and after
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