DSEP15-06BS
HiPerFRED
V
RRM
I
FAV
t
rr
=
=
=
600 V
15 A
25 ns
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
Part number
DSEP15-06BS
Marking on Product: DSEP15-06BS
Backside: cathode
1
3
2/4
Features / Advantages:
●
Planar passivated chips
●
Very low leakage current
●
Very short recovery time
●
Improved thermal behaviour
●
Very low Irm-values
●
Very soft recovery behaviour
●
Avalanche voltage rated for reliable operation
●
Soft reverse recovery for low EMI/RFI
●
Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
●
Antiparallel diode for high frequency
switching devices
●
Antisaturation diode
●
Snubber diode
●
Free wheeling diode
●
Rectifiers in switch mode power
supplies (SMPS)
●
Uninterruptible power supplies (UPS)
Package:
TO-263 (D2Pak)
●
Industry standard outline
●
RoHS compliant
●
Epoxy meets UL 94V-0
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20190219b
© 2019 IXYS all rights reserved
DSEP15-06BS
Fast Diode
Symbol
V
RSM
V
RRM
I
R
V
F
Definition
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 150°C
T
VJ
= 25°C
T
VJ
= 150 °C
T
VJ
= 175 °C
d = 0.5
T
VJ
= 175 °C
0.98
28
0.25
T
C
= 25°C
t = 10 ms; (50 Hz), sine; V
R
= 0 V
V
R
= 400 V f = 1 MHz
I
F
=
t
rr
reverse recovery time
Ratings
min.
typ.
max. Unit
600
V
600
100
0.5
2.54
2.99
1.59
2.04
15
V
µA
mA
V
V
V
V
A
V
mΩ
K/W
95
110
12
2
3
25
80
W
A
pF
A
A
ns
ns
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
reverse current, drain current
V
R
= 600 V
V
R
= 600 V
I
F
=
I
F
=
I
F
=
I
F
=
15 A
30 A
15 A
30 A
forward voltage drop
I
FAV
V
F0
r
F
R
thJC
R
thCH
P
tot
I
FSM
C
J
I
RM
average forward current
T
C
= 130 °C
rectangular
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
junction capacitance
max. reverse recovery current
1.6 K/W
T
VJ
= 45°C
T
VJ
= 25°C
T
VJ
= 25 °C
T
VJ
= 100 °C
T
VJ
= 25 °C
T
VJ
= 100 °C
15 A; V
R
= 300 V
-di
F
/dt = 200 A/µs
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20190219b
© 2019 IXYS all rights reserved
DSEP15-06BS
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
F
C
1)
TO-263 (D2Pak)
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
1)
min.
-55
-55
-55
typ.
max.
35
175
150
150
Unit
A
°C
°C
°C
g
N
2
mounting force with clip
20
60
I
RMS
is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product
with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact.
Product Marking
Part No.
Logo
Assembly Line
Date Code
Assembly Code
XXXXXXXXX
IXYS
Zyyww
000000
Ordering
Standard
Alternative
Ordering Number
DSEP15-06BS-TRL
DSEP15-06BS-TUB
Marking on Product
DSEP15-06BS
DSEP15-06BS
Delivery Mode
Tape & Reel
Tube
Quantity
800
50
Code No.
513028
525184
Similar Part
DSEP15-06AS
DSEP15-06A
DSEP15-06B
Package
TO-263AB (D2Pak) (2)
TO-220AC
TO-220AC
Voltage class
600
600
600
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Fast
Diode
* on die level
T
VJ
= 175 °C
V
0 max
R
0 max
0.98
25
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20190219b
© 2019 IXYS all rights reserved
DSEP15-06BS
Outlines TO-263 (D2Pak)
Dim.
W
A
c2
Supplier
Option
E
D
A1
H
4
1 2 3
c
2x e
10.92
(0.430)
3x b2
mm (Inches)
2x b
E1
A
A1
A2
b
b2
c
c2
D
D1
D2
E
E1
e
e1
H
L
L1
W
9.02
(0.355)
Millimeter
min
max
4.06
4.83
typ. 0.10
2.41
0.51
0.99
1.14
1.40
0.40
0.74
1.14
1.40
8.38
9.40
8.00
8.89
2.5
9.65
10.41
6.22
8.50
2,54 BSC
4.28
14.61 15.88
1.78
2.79
1.02
1.68
typ.
0.040
0.02
Inches
min
max
0.160 0.190
typ. 0.004
0.095
0.020 0.039
0.045 0.055
0.016 0.029
0.045 0.055
0.330 0.370
0.315 0.350
0.098
0.380 0.410
0.245 0.335
0,100 BSC
0.169
0.575 0.625
0.070 0.110
0.040 0.066
typ.
0.002
0.0008
L1
L2
L
D1
All dimensions conform with
and/or within JEDEC standard.
3.81
(0.150)
1.78
(0.07)
2.54 (0.100)
3.05
(0.120)
Recommended min. foot print
1
3
2/4
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20190219b
© 2019 IXYS all rights reserved
DSEP15-06BS
Fast Diode
50
300
250
T
VJ
= 150°C
200
T
VJ
= 100°C
V
R
= 300 V
I
F
= 30 A
I
F
= 15 A
150
I
F
= 7.5 A
12
10
8
I
F
= 30 A
I
F
= 15 A
I
F
= 7.5 A
40
I
F
30
[A]
20
T
VJ
= 100°C
Q
r
[µC]
100
T
VJ
= 25°C
I
RM
6
[A]
4
2
0
1000
0
200
400
T
VJ
= 100°C
V
R
= 300 V
10
50
0
100
0
0
1
2
3
4
600
800
1000
V
F
[V]
Fig. 1 Forward current
I
F
versus V
F
-di
F
/dt [A/µs]
Fig. 2 Typ. reverse recov. charge
Q
r
versus -di
F
/dt
-di
F
/dt [A/µs]
Fig. 3 Typ. peak reverse current
I
RM
versus -di
F
/dt
2.0
120
T
VJ
= 100°C
V
R
= 300 V
60
T
VJ
= 100°C
50 I
F
= 15 A
40
0.30
0.25
0.20
0.15
0.10
0.05
0.00
1000
1.5
100
t
rr
K
f
1.0
I
RM
0.5
80
I
F
= 30 A
I
F
= 15 A
I
F
= 7.5 A
V
FR
30
t
fr
[ns]
60
[µs]
[V]
20
V
FR
10
t
fr
Q
r
0.0
0
40
80
120
160
40
0
0
200
400
600
800
1000
0
200
400
600
800
T
VJ
[°C]
Fig. 4 Dynamic parameters
Q
r
, I
RM
versus T
VJ
-di
F
/dt [A/µs]
Fig. 5 Typ. recovery time
t
rr
versus -di
F
/dt
-di
F
/dt [A/µs]
Fig. 6 Typ. peak forward voltage
V
FR
and t
fr
versus di
F
/dt
10
1
Z
thJC
0.1
[K/W]
0.01
Constants for Z
thJC
calculation:
i
R
thi
(K/W)
t
i
(s)
0.0052
0.0003
0.017
1 0.908
2 0.350
3 0.342
0.001
0.00001
DSEP 15-06B
0.0001
0.001
0.01
0.1
1
t [s]
Fig. 7 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20190219b
© 2019 IXYS all rights reserved
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