AOD413Y
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD413Y uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and low
gate resistance. With the excellent thermal resistance
of the DPAK package, this device is well suited for
high current load applications.
Standard product
AOD413Y is Pb free, inside and out. It uses Pb-free
die attach and plating material(meets ROHS & Sony
259 specifications). AOD413YL is a Green Product
ordering option. AOD413Y and AOD413YL are
electrically identical.
TO-252
D-PAK
Features
V
DS
(V) = -40V
I
D
= -12A (V
GS
= -10V)
R
DS(ON)
< 45mΩ (V
GS
= -10V)
R
DS(ON)
< 69mΩ (V
GS
= -4.5V)
D
Top View
Drain Connected to
Tab
G
S
G
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
B,G
Pulsed Drain Current
Avalanche Current
C
Repetitive avalanche energy L=0.1mH
T
C
=25°C
Power Dissipation
Power Dissipation
B
C
Maximum
-40
±20
-12
-12
-30
-12
30
50
25
2.5
1.6
-55 to 175
Units
V
V
A
A
mJ
W
W
°C
T
A
=25°C
G
G
T
A
=100°C
I
D
I
DM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
T
C
=100°C
T
A
=25°C
T
A
=70°C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Case
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
16.7
40
2.5
Max
25
50
3
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOD413Y
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
V
GS
=-4.5V, I
D
=-8A
Forward Transconductance
V
DS
=-5V, I
D
=-12A
I
S
=-1A,V
GS
=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Conditions
I
D
=-10mA, V
GS
=0V
V
DS
=-32V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS
I
D
=-250µA
V
GS
=-10V, V
DS
=-5V
V
GS
=-10V, I
D
=-12A
T
J
=125°C
-1
-30
36
56
51
16
-0.75
-1
-12
657
V
GS
=0V, V
DS
=-20V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
143
63
6.5
14.1
V
GS
=-10V, V
DS
=-20V, I
D
=-12A
7
2.2
4.1
8
V
GS
=-10V, V
DS
=-20V, R
L
=1.7Ω,
R
GEN
=3Ω
I
F
=-12A, dI/dt=100A/µs
I
F
=-12A, dI/dt=100A/µs
12.2
24
12.5
23.2
18.2
45
70
69
-1.9
Min
-40
-1
-5
±100
-3
Typ
Max
Units
V
µA
nA
V
A
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
(10V) Total Gate Charge (10V)
Q
g
(4.5V) Total Gate Charge (4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
A: The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The Power
dissipation PDSM is based on R qJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's
specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
Rev 0: Oct 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOD413Y
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
-10V
25
-6V
20
-I
D
(A)
15
15
-3.5V
10
V
GS
=-3V
5
0
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics
70
65
Normalized On-Resistance
60
R
DS(ON)
(mΩ)
55
50
45
40
35
30
0
5
10
15
20
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
150
135
I
D
=-12A
120
R
DS(ON)
(mΩ)
105
90
75
60
45
30
3
4
5
6
7
8
9
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
25°C
1.0E-04
25°C
1.0E-05
1.0E-06
0.0
0.2
0.4
0.6
0.8
1.0
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
125°C
-I
S
(A)
1.0E-02
1.0E-03
1.0E-01
V
GS
=-10V
V
GS
=-4.5V
1.60
1.80
V
GS
=-10V
I
D
=-12A
125°C
5
25°C
-I
D
(A)
-5V
-4.5V
25
V
DS
=-5V
20
-4V
I
D
=-10mA, V
GS
=0V
10
0
1
1.5
2
2.5
3
3.5
4
4.5
5
-V
GS
(Volts)
Figure 2: Transfer Characteristics
1.40
V
GS
=-4.5V
I
D
=-8A
1.20
1.00
0.80
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+01
1.0E+00
125°C
Alpha & Omega Semiconductor, Ltd.
AOD413Y
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=-15V
I
D
=-12A
1000
8
-V
GS
(Volts)
I
D
=-10mA, V
GS
=0V
750
Capacitance (pF)
C
iss
6
500
C
oss
250
C
rss
4
2
0
0
3
6
9
12
15
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
0
0
10
20
30
40
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
100.0
T
J(Max)
=175°C, T
A
=25°C
R
DS(ON)
limited
10µs
1ms
Power (W)
200
160
T
J(Max)
=175°C
T
A
=25°C
-I
D
(Amps)
10.0
120
80
100µs
10ms
1.0
DC
40
0.1
0.1
1
-V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
100
0
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJC
.R
θJC
R
θJC
=3°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
P
D
T
on
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
AOD413Y
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
14
-I
D
(A), Peak Avalanche Current
60
12
Power Dissipation (W)
L
⋅
I
t
D
=-10mA, V
D
=0V
I
A
=
GS
BV
−
V
DD
50
40
30
20
10
0
10
8
T
A
=25°C
6
0.00001
0.0001
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability
0.001
0
25
50
75
100
125
150
175
T
CASE
(°C)
Figure 13: Power De-rating (Note B)
14
12
Current rating -I
D
(A)
10
8
6
4
2
0
0
25
50
75
100
125
150
175
T
CASE
(°C)
Figure 14: Current De-rating (Note B)
Power (W)
60
50
40
30
20
10
0
0.001
T
A
=25°C
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
10
Z
θ
JA
Normalized Transient
Thermal Resistance
1
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=50°C/W
0.1
P
D
Single Pulse
T
on
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
0.01
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
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