B530C datasheet, PDF - EEWORLD Datasheet

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B530C: DescriptionRectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 30V V(RRM), Silicon; CategoryDiscrete semiconductor diode; File Size50KB，4 Pages; ManufacturerVishay; Websitehttp://www.vishay.com

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B530C Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 30V V(RRM), Silicon

B530C Parametric

Parameter Name	Attribute value
package instruction	R-PDSO-C2
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOW POWER LOSS, FREE WHEELING
application	EFFICIENCY
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	R-PDSO-C2
Maximum non-repetitive peak forward current	175 A
Number of components	1
Phase	1
Number of terminals	2
Maximum output current	5 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	30 V
surface mount	YES
technology	SCHOTTKY
Terminal form	C BEND
Terminal location	DUAL
Base Number Matches	1

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B520C–B560C

Vishay Lite–On Power Semiconductor

5.0A Surface Mount Schottky Barrier Rectifiers

Features

Schottky barrier chip

Guard ring die construction for transient

protection

Ideally suited for automatic assembly

Low power loss, high efficiency

Surge overload rating to 175A peak

For use in low voltage, high frequency inverters,

free wheeling, and polarity protection

application

at terminal

14 417

High temperature soldering: 260

C/10 second

Plastic material – UL recognition flammability

classification 94V–0

Absolute Maximum Ratings

= 25

Parameter

Repetitive peak reverse voltage

=Working peak reverse voltage

=DC Bl ki voltage

DC Blocking lt

Test Conditions

Type

B520C

B530C

B540C

B550C

B560C

Symbol

RRM

RWM

Value

175

–65...+150

Unit

Peak forward surge current

Average forward current

Junction and storage

temperature range

=110

FSM

FAV

stg

Electrical Characteristics

= 25

Parameter

Forward voltage

Test Conditions

=5A DC

Type

B520C–

B540C

B550C–

B560C

Symbol

thJA

Min

Typ

Max

0.55

0.7

0.5

300

Unit

K/W

Reverse current

Diode capacitance

Thermal resistance

junction to ambient

=25

=100

=4V, f=1MHz

=const.

Rev. A2, 24-Jun-98

1 (4)

B520C–B560C

Vishay Lite–On Power Semiconductor

Ozone Depleting Substances Policy Statement

It is the policy of

Vishay Semiconductor GmbH

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating

systems with respect to their impact on the health and safety of our employees and the public, as well as

their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known

as ozone depleting substances ( ODSs ).

The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and

forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban

on these substances.

Vishay Semiconductor GmbH

has been able to use its policy of continuous improvements to eliminate the use

of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency ( EPA ) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.

Vishay Semiconductor GmbH

can certify that our semiconductors are not manufactured with ozone depleting

substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer

application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized

application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out

of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or

unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423

4 (4)

Rev. A2, 24-Jun-98

B530C Related Products

	B530C	B550C	RC1206J184-07-T70	B520C
Description	Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 30V V(RRM), Silicon	Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 50V V(RRM), Silicon	Fixed Resistor, Metal Glaze/thick Film, 0.25W, 180000ohm, 200V, 5% +/-Tol, 100ppm/Cel, Surface Mount, 1206, CHIP	Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 20V V(RRM), Silicon
package instruction	R-PDSO-C2	R-PDSO-C2	CHIP	R-PDSO-C2
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
Other features	LOW POWER LOSS, FREE WHEELING	LOW POWER LOSS, FREE WHEELING	LASER TRIMMABLE	LOW POWER LOSS, FREE WHEELING
Number of terminals	2	2	2	2
Package form	SMALL OUTLINE	SMALL OUTLINE	SMT	SMALL OUTLINE
surface mount	YES	YES	YES	YES
technology	SCHOTTKY	SCHOTTKY	METAL GLAZE/THICK FILM	SCHOTTKY
application	EFFICIENCY	EFFICIENCY	-	EFFICIENCY
Configuration	SINGLE	SINGLE	-	SINGLE
Diode component materials	SILICON	SILICON	-	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	-	RECTIFIER DIODE
JESD-30 code	R-PDSO-C2	R-PDSO-C2	-	R-PDSO-C2
Maximum non-repetitive peak forward current	175 A	175 A	-	175 A
Number of components	1	1	-	1
Phase	1	1	-	1
Maximum output current	5 A	5 A	-	5 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	-	RECTANGULAR
Certification status	Not Qualified	Not Qualified	-	Not Qualified
Maximum repetitive peak reverse voltage	30 V	50 V	-	20 V
Terminal form	C BEND	C BEND	-	C BEND
Terminal location	DUAL	DUAL	-	DUAL
Base Number Matches	1	1	-	1

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