NAND08GW4B2CZC6T datasheet, PDF

NAND08GW4B2CZC6T: Description512MX16 FLASH 3V PROM, 35ns, PBGA63, 9.50 X 12 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, LFBGA-63; Categorystorage storage; File Size1MB，59 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/

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NAND08GW4B2CZC6T Overview

512MX16 FLASH 3V PROM, 35ns, PBGA63, 9.50 X 12 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, LFBGA-63

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	STMicroelectronics
Parts packaging code	BGA
package instruction	9.50 X 12 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, LFBGA-63
Contacts	63
Reach Compliance Code	compliant
ECCN code	3A991.B.1.A
Maximum access time	35 ns
JESD-30 code	R-PBGA-B63
JESD-609 code	e0
length	15 mm
memory density	8589934592 bit
Memory IC Type	FLASH
memory width	16
Number of functions	1
Number of terminals	63
word count	536870912 words
character code	512000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	512MX16
Package body material	PLASTIC/EPOXY
encapsulated code	LFBGA
Package shape	RECTANGULAR
Package form	GRID ARRAY, LOW PROFILE, FINE PITCH
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Programming voltage	3 V
Certification status	Not Qualified
Maximum seat height	1.4 mm
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	TIN LEAD
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
type	NAND TYPE
width	8.5 mm
Base Number Matches	1

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