EEWORLDEEWORLDEEWORLD

Part Number

Search

GS882V18BGD-200

Description
Cache SRAM, 512KX18, 6.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, LEAD FREE, FBGA-165
Categorystorage    storage   
File Size1023KB,36 Pages
ManufacturerGSI Technology
Websitehttp://www.gsitechnology.com/
Environmental Compliance  
Download Datasheet Parametric View All

GS882V18BGD-200 Overview

Cache SRAM, 512KX18, 6.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, LEAD FREE, FBGA-165

GS882V18BGD-200 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerGSI Technology
Parts packaging codeBGA
package instructionTBGA,
Contacts165
Reach Compliance Codecompliant
ECCN code3A991.B.2.B
Maximum access time6.5 ns
Other featuresFLOW-THROUGH OR PIPELINED ARCHITECTURE
JESD-30 codeR-PBGA-B165
JESD-609 codee1
length15 mm
memory density9437184 bit
Memory IC TypeCACHE SRAM
memory width18
Humidity sensitivity level3
Number of functions1
Number of terminals165
word count524288 words
character code512000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize512KX18
Package body materialPLASTIC/EPOXY
encapsulated codeTBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)2 V
Minimum supply voltage (Vsup)1.6 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width13 mm
Base Number Matches1
GS882V18/36BB/D-333/300/250/200
119- and 165-Bump BGA
Commercial Temp
Industrial Temp
Features
• FT pin for user-configurable flow through or pipeline operation
• Single/Dual Cycle Deselect selectable
• IEEE 1149.1 JTAG-compatible Boundary Scan
• On-chip read parity checking; even or odd selectable
• ZQ mode pin for user-selectable high/low output drive
• 1.8 V +10%/–10% core power supply
• 1.8 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to SCD x18/x36 Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 119- and 165-bump BGA packages
• Pb-Free 119-bump and 165-bump packages available
512K x 18, 256K x 36
9Mb SCD/DCD Sync Burst SRAMs
333 MHz–200 MHz
1.8 V V
DD
1.8 V I/O
Data Output Register. Holding FT high places the RAM in
Pipeline mode, activating the rising-edge-triggered Data Output
Register.
Functional Description
Applications
The GS882V18/36B is a 9,437,184-bit high performance
synchronous SRAM with a 2-bit burst address counter. Although
of a type originally developed for Level 2 Cache applications
supporting high performance CPUs, the device now finds
application in synchronous SRAM applications, ranging from
DSP main store to networking chip set support.
Controls
Addresses, data I/Os, chip enable (E1), address burst control
inputs (ADSP, ADSC, ADV), and write control inputs (Bx, BW,
GW) are synchronous and are controlled by a positive-edge-
triggered clock input (CK). Output enable (G) and power down
control (ZZ) are asynchronous inputs. Burst cycles can be initiated
with either ADSP or ADSC inputs. In Burst mode, subsequent
burst addresses are generated internally and are controlled by
ADV. The burst address counter may be configured to count in
either linear or interleave order with the Linear Burst Order (LBO)
input. The Burst function need not be used. New addresses can be
loaded on every cycle with no
degradation of chip performance.
Flow Through/Pipeline Reads
The function of the Data Output register can be controlled by the
user via the FT mode . Holding the FT mode pin low places the
RAM in Flow Through mode, causing output data to bypass the
SCD and DCD Pipelined Reads
The GS882V18/36B is a SCD (Single Cycle Deselect) and
DCD (Dual Cycle Deselect) pipelined synchronous SRAM.
DCD SRAMs pipeline disable commands to the same degree
as read commands. SCD SRAMs pipeline deselect commands
one stage less than read commands. SCD RAMs begin turning
off their outputs immediately after the deselect command has
been captured in the input registers. DCD RAMs hold the
deselect command for one full cycle and then begin turning off
their outputs just after the second rising edge of clock. The user
may configure this SRAM for either mode of operation using
the SCD mode input.
Byte Write and Global Write
Byte write operation is performed by using Byte Write enable
(BW) input combined with one or more individual byte write
signals (Bx). In addition, Global Write (GW) is available for
writing all bytes at one time, regardless of the Byte Write
control inputs.
FLXDrive™
The ZQ pin allows selection between high drive strength (ZQ
low) for multi-drop bus applications and normal drive strength
(ZQ floating or high) point-to-point applications. See the
Output Driver Characteristics chart for details.
Sleep Mode
Low power (Sleep mode) is attained through the assertion
(High) of the ZZ signal, or by stopping the clock (CK).
Memory data is retained during Sleep mode.
Core and Interface Voltages
The GS882V18/36B operates on a 2.5 V or 3.3 V power
supply. All input are 3.3 V and 2.5 V compatible. Separate
output power (V
DDQ
) pins are used to decouple output noise
from the internal circuits and are 3.3 V and 2.5 V compatible.
Paramter Synopsis
-333
-300
2.5
3.3
225
250
5.0
5.0
180
200
-250
2.5
4.0
195
220
5.5
5.5
155
175
-200
3.0
5.0
165
185
6.5
6.5
140
155
Unit
ns
ns
mA
mA
ns
ns
mA
mA
Pipeline
3-1-1-1
t
KQ
tCycle
Curr (x18)
Curr (x32/x36)
t
KQ
tCycle
Curr (x18)
Curr (x32/x36)
2.5
3.0
245
275
4.5
4.5
195
220
Flow Through
2-1-1-1
Rev: 1.02 3/2005
1/36
© 2004, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
High-Speed Serial I/O Made Easy (FPGA Application Designer's Guide)
Input/output (I/O) has always played a key role in computer and industrial applications. However, as signal processing became more complex, I/O communications became unreliable. In early parallel I/O ...
arui1999 Download Centre
DSP development based on dual-core chip of CCS
[i=s]This post was last edited by Jacktang on 2019-10-11 14:46[/i]Because of the dual-core heterogeneous processor, one is DSP core and the other is ARM core, the official development methods are all ...
Jacktang DSP and ARM Processors
Working principle and function of encoder
[p=30, null, left][color=rgb(34, 34, 34)][font="][size=4] The working principle and function of the encoder: It is a rotary sensor that converts rotational displacement into a series of digital pulse ...
fish001 Analogue and Mixed Signal
【LuatOS-ESP32】Series Column Preview
[Foreword] I need to go on a business trip next week. Due to time constraints, I have not applied for a new board for the current development board review. I recently bought two ESP32C3 development bo...
lugl4313820 Domestic Chip Exchange
HTS221 temperature and humidity sensor driver has been added to makecode
The HTS221 temperature and humidity sensor driver has been officially added to the main branch of MakeCode, and the remaining sensor drivers will soon be added to MakeCode. In the future, you will hav...
dcexpert MEMS sensors
Urgently recruiting a development engineer who knows assembly language
Urgent recruitment! Urgent recruitment! Urgent recruitment! Salary: Negotiable Work location: SOHO Phase 1, Guanghua Road, Chaoyang District, Beijing Welcome experts who know assembly language to hara...
warmm Recruitment

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号