PU4422Q datasheet, PDF - EEWORLD Datasheet

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PU4422Q: DescriptionPower Bipolar Transistor, 4A I(C), 25V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 10 Pin, SIP-10; CategoryDiscrete semiconductor The transistor; File Size211KB，3 Pages; ManufacturerPanasonic; Websitehttp://www.panasonic.co.jp/semicon/e-index.html

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PU4422Q Overview

Power Bipolar Transistor, 4A I(C), 25V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 10 Pin, SIP-10

PU4422Q Parametric

Parameter Name	Attribute value
Maker	Panasonic
Parts packaging code	SIP
package instruction	IN-LINE, R-PSIP-T10
Contacts	10
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	4 A
Collector-emitter maximum voltage	25 V
Configuration	COMPLEX
Minimum DC current gain (hFE)	1000
JESD-30 code	R-PSIP-T10
Number of components	4
Number of terminals	10
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	20 MHz
Base Number Matches	1

PU4422Q Related Products

	PU4422Q	PUB4422	PUB4422Q	PUB4422P
Description	Power Bipolar Transistor, 4A I(C), 25V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 10 Pin, SIP-10	Power Bipolar Transistor, 4A I(C), 25V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 10 Pin, SIP-10	Power Bipolar Transistor, 4A I(C), 25V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 10 Pin, SIP-10	Power Bipolar Transistor, 4A I(C), 25V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 10 Pin, SIP-10
Maker	Panasonic	Panasonic	Panasonic	Panasonic
Parts packaging code	SIP	SIP	SIP	SIP
package instruction	IN-LINE, R-PSIP-T10	SIP-10	SIP-10	SIP-10
Contacts	10	10	10	10
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	4 A	4 A	4 A	4 A
Collector-emitter maximum voltage	25 V	25 V	25 V	25 V
Configuration	COMPLEX	COMPLEX	COMPLEX	COMPLEX
Minimum DC current gain (hFE)	1000	1000	1000	2000
JESD-30 code	R-PSIP-T10	R-PSIP-T10	R-PSIP-T10	R-PSIP-T10
Number of components	4	4	4	4
Number of terminals	10	10	10	10
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE	IN-LINE
Polarity/channel type	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	20 MHz	20 MHz	20 MHz	20 MHz
Base Number Matches	1	1	1	1

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